The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors
Abstract In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ b increases, and the ideality factor n decreases as the temperature increase...
| Main Authors: | , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2020-08-01
|
| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-020-03397-8 |
| _version_ | 1797762435514368000 |
|---|---|
| author | Tao Zhang Yixian Shen Qian Feng Xusheng Tian Yuncong Cai Zhuangzhuang Hu Guangshuo Yan Zhaoqing Feng Yachao Zhang Jing Ning Yongkuan Xu Xiaozheng Lian Xiaojuan Sun Chunfu Zhang Hong Zhou Jincheng Zhang Yue Hao |
| author_facet | Tao Zhang Yixian Shen Qian Feng Xusheng Tian Yuncong Cai Zhuangzhuang Hu Guangshuo Yan Zhaoqing Feng Yachao Zhang Jing Ning Yongkuan Xu Xiaozheng Lian Xiaojuan Sun Chunfu Zhang Hong Zhou Jincheng Zhang Yue Hao |
| author_sort | Tao Zhang |
| collection | DOAJ |
| description | Abstract In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ b increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga2O3 interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R 254 nm/R 400 nm up to 1.26 × 103 are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga2O3 Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors. |
| first_indexed | 2024-03-12T19:28:17Z |
| format | Article |
| id | doaj.art-0e2ffa171dcb4b59aab15fe7a7ef4e2d |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:28:17Z |
| publishDate | 2020-08-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-0e2ffa171dcb4b59aab15fe7a7ef4e2d2023-08-02T04:45:23ZengSpringerOpenNanoscale Research Letters1556-276X2020-08-011511810.1186/s11671-020-03397-8The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier PhotodetectorsTao Zhang0Yixian Shen1Qian Feng2Xusheng Tian3Yuncong Cai4Zhuangzhuang Hu5Guangshuo Yan6Zhaoqing Feng7Yachao Zhang8Jing Ning9Yongkuan Xu10Xiaozheng Lian11Xiaojuan Sun12Chunfu Zhang13Hong Zhou14Jincheng Zhang15Yue Hao16State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityChina Electronics Technology Group Corporation No. 46 Research InstituteChina Electronics Technology Group Corporation No. 46 Research InstituteState Key Laboratory of Luminescence and Applications, Changchun Institute of Opeics, Chinese Academy of SciencesState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityAbstract In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ b increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga2O3 interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R 254 nm/R 400 nm up to 1.26 × 103 are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga2O3 Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.http://link.springer.com/article/10.1186/s11671-020-03397-8β-Ga2O3PEDOT:PSSHybrid Schottky diodesPhotodetector |
| spellingShingle | Tao Zhang Yixian Shen Qian Feng Xusheng Tian Yuncong Cai Zhuangzhuang Hu Guangshuo Yan Zhaoqing Feng Yachao Zhang Jing Ning Yongkuan Xu Xiaozheng Lian Xiaojuan Sun Chunfu Zhang Hong Zhou Jincheng Zhang Yue Hao The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors Nanoscale Research Letters β-Ga2O3 PEDOT:PSS Hybrid Schottky diodes Photodetector |
| title | The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors |
| title_full | The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors |
| title_fullStr | The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors |
| title_full_unstemmed | The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors |
| title_short | The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors |
| title_sort | investigation of hybrid pedot pss β ga2o3 deep ultraviolet schottky barrier photodetectors |
| topic | β-Ga2O3 PEDOT:PSS Hybrid Schottky diodes Photodetector |
| url | http://link.springer.com/article/10.1186/s11671-020-03397-8 |
| work_keys_str_mv | AT taozhang theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT yixianshen theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT qianfeng theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT xushengtian theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT yuncongcai theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT zhuangzhuanghu theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT guangshuoyan theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT zhaoqingfeng theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT yachaozhang theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT jingning theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT yongkuanxu theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT xiaozhenglian theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT xiaojuansun theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT chunfuzhang theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT hongzhou theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT jinchengzhang theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT yuehao theinvestigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT taozhang investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT yixianshen investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT qianfeng investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT xushengtian investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT yuncongcai investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT zhuangzhuanghu investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT guangshuoyan investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT zhaoqingfeng investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT yachaozhang investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT jingning investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT yongkuanxu investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT xiaozhenglian investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT xiaojuansun investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT chunfuzhang investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT hongzhou investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT jinchengzhang investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors AT yuehao investigationofhybridpedotpssbga2o3deepultravioletschottkybarrierphotodetectors |