Role of nitrogen source flow on the growth of 2D GaN crystals

Role of nitrogen source flow on the growth of 2D GaN crystals

As a class of non-layered compounds, ultrathin III-V semiconductors possess excellent physical and chemical properties, are promising candidates for optoelectronic and thermoelectric applications. Due to the strong chemical bonds both in plane and out of plane, the controllable growth of two-dimensi...

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Bibliographic Details
Main Authors: Gehui Zhang, Xiangping Chen, Meijie Zhu, Hua Xu, Zuoquan Tan, Ruitao Luo, Jiaqi Jia, Le Wang
Format: Article
Language:English
Published: Elsevier 2022-12-01
Series:Results in Physics
Subjects:
III-nitride
2D GaN
CVD
Liquid metal substrate
Online Access:http://www.sciencedirect.com/science/article/pii/S221137972200732X
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Summary:As a class of non-layered compounds, ultrathin III-V semiconductors possess excellent physical and chemical properties, are promising candidates for optoelectronic and thermoelectric applications. Due to the strong chemical bonds both in plane and out of plane, the controllable growth of two-dimensional (2D) III-V semiconductors is quite challenging. In this study, we report the successful synthesis of 2D GaN crystals by chemical vapor deposition (CVD) on liquid Ga. The nitrogen source flow is found to be a key factor that governs the transformation of GaN growth from 2D layered mode to three-dimensional (3D) island mode. This study provides further understanding on the growth of non-layered 2D III-nitride materials.
ISSN:2211-3797

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