Role of nitrogen source flow on the growth of 2D GaN crystals
As a class of non-layered compounds, ultrathin III-V semiconductors possess excellent physical and chemical properties, are promising candidates for optoelectronic and thermoelectric applications. Due to the strong chemical bonds both in plane and out of plane, the controllable growth of two-dimensi...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2022-12-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S221137972200732X |
| _version_ | 1811185900915261440 |
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| author | Gehui Zhang Xiangping Chen Meijie Zhu Hua Xu Zuoquan Tan Ruitao Luo Jiaqi Jia Le Wang |
| author_facet | Gehui Zhang Xiangping Chen Meijie Zhu Hua Xu Zuoquan Tan Ruitao Luo Jiaqi Jia Le Wang |
| author_sort | Gehui Zhang |
| collection | DOAJ |
| description | As a class of non-layered compounds, ultrathin III-V semiconductors possess excellent physical and chemical properties, are promising candidates for optoelectronic and thermoelectric applications. Due to the strong chemical bonds both in plane and out of plane, the controllable growth of two-dimensional (2D) III-V semiconductors is quite challenging. In this study, we report the successful synthesis of 2D GaN crystals by chemical vapor deposition (CVD) on liquid Ga. The nitrogen source flow is found to be a key factor that governs the transformation of GaN growth from 2D layered mode to three-dimensional (3D) island mode. This study provides further understanding on the growth of non-layered 2D III-nitride materials. |
| first_indexed | 2024-04-11T13:38:15Z |
| format | Article |
| id | doaj.art-0e52b23805b147c8afb26f8de742202b |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-04-11T13:38:15Z |
| publishDate | 2022-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-0e52b23805b147c8afb26f8de742202b2022-12-22T04:21:23ZengElsevierResults in Physics2211-37972022-12-0143106118Role of nitrogen source flow on the growth of 2D GaN crystalsGehui Zhang0Xiangping Chen1Meijie Zhu2Hua Xu3Zuoquan Tan4Ruitao Luo5Jiaqi Jia6Le Wang7Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, ChinaTsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, ChinaDepartment of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, ChinaDepartment of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, ChinaDepartment of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, ChinaDepartment of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, ChinaDepartment of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, ChinaDepartment of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, China; Corresponding author.As a class of non-layered compounds, ultrathin III-V semiconductors possess excellent physical and chemical properties, are promising candidates for optoelectronic and thermoelectric applications. Due to the strong chemical bonds both in plane and out of plane, the controllable growth of two-dimensional (2D) III-V semiconductors is quite challenging. In this study, we report the successful synthesis of 2D GaN crystals by chemical vapor deposition (CVD) on liquid Ga. The nitrogen source flow is found to be a key factor that governs the transformation of GaN growth from 2D layered mode to three-dimensional (3D) island mode. This study provides further understanding on the growth of non-layered 2D III-nitride materials.http://www.sciencedirect.com/science/article/pii/S221137972200732XIII-nitride2D GaNCVDLiquid metal substrate |
| spellingShingle | Gehui Zhang Xiangping Chen Meijie Zhu Hua Xu Zuoquan Tan Ruitao Luo Jiaqi Jia Le Wang Role of nitrogen source flow on the growth of 2D GaN crystals Results in Physics III-nitride 2D GaN CVD Liquid metal substrate |
| title | Role of nitrogen source flow on the growth of 2D GaN crystals |
| title_full | Role of nitrogen source flow on the growth of 2D GaN crystals |
| title_fullStr | Role of nitrogen source flow on the growth of 2D GaN crystals |
| title_full_unstemmed | Role of nitrogen source flow on the growth of 2D GaN crystals |
| title_short | Role of nitrogen source flow on the growth of 2D GaN crystals |
| title_sort | role of nitrogen source flow on the growth of 2d gan crystals |
| topic | III-nitride 2D GaN CVD Liquid metal substrate |
| url | http://www.sciencedirect.com/science/article/pii/S221137972200732X |
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