Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing
Nitrogen-vacancy (NV) centers in diamond photonic nanostructures have attracted much attention as efficient single photon emitters and quantum bits. These quantum optical devices mostly require single or low-density NV centers doped in thin diamond membranes. In contrast, this study focuses on diamo...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2020-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0001922 |
| _version_ | 1818251092092256256 |
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| author | Hisashi Sumikura Kazuyuki Hirama Katsuhiko Nishiguchi Akihiko Shinya Masaya Notomi |
| author_facet | Hisashi Sumikura Kazuyuki Hirama Katsuhiko Nishiguchi Akihiko Shinya Masaya Notomi |
| author_sort | Hisashi Sumikura |
| collection | DOAJ |
| description | Nitrogen-vacancy (NV) centers in diamond photonic nanostructures have attracted much attention as efficient single photon emitters and quantum bits. These quantum optical devices mostly require single or low-density NV centers doped in thin diamond membranes. In contrast, this study focuses on diamond photonic nanostructures with a high concentration of NV centers to achieve a diamond color center laser with a sufficient gain available as a visible light source and a sensitive magnetic-field sensor. We employ high-dose helium ion implantation to type-Ib diamond substrates and thermal annealing, which enables us to obtain uniform thin diamond membranes containing a dense ensemble of NV centers. Luminescence spectroscopy reveals the kinetics of NV centers at high temperature from which we find an optimum annealing temperature maximizing the NV center emission while suppressing the transformation from NV to H3 centers. Furthermore, fine photonic nanowires are also successfully fabricated in the air-suspended diamond membrane, and they exhibit intense photoluminescence from the NV centers with a concentration as high as 7 × 1016 cm−3 (0.4 ppm). These results suggest a route to the fabrication of diamond photonic nanostructures containing a dense ensemble of NV centers, which can be a key material for developing diamond-based light emitting and magnetic-field sensing devices. |
| first_indexed | 2024-12-12T16:02:47Z |
| format | Article |
| id | doaj.art-0e59c997465047dbb133140b0495ea7c |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-12T16:02:47Z |
| publishDate | 2020-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-0e59c997465047dbb133140b0495ea7c2022-12-22T00:19:23ZengAIP Publishing LLCAPL Materials2166-532X2020-03-0183031113031113-710.1063/5.0001922Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealingHisashi Sumikura0Kazuyuki Hirama1Katsuhiko Nishiguchi2Akihiko Shinya3Masaya Notomi4NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, JapanNitrogen-vacancy (NV) centers in diamond photonic nanostructures have attracted much attention as efficient single photon emitters and quantum bits. These quantum optical devices mostly require single or low-density NV centers doped in thin diamond membranes. In contrast, this study focuses on diamond photonic nanostructures with a high concentration of NV centers to achieve a diamond color center laser with a sufficient gain available as a visible light source and a sensitive magnetic-field sensor. We employ high-dose helium ion implantation to type-Ib diamond substrates and thermal annealing, which enables us to obtain uniform thin diamond membranes containing a dense ensemble of NV centers. Luminescence spectroscopy reveals the kinetics of NV centers at high temperature from which we find an optimum annealing temperature maximizing the NV center emission while suppressing the transformation from NV to H3 centers. Furthermore, fine photonic nanowires are also successfully fabricated in the air-suspended diamond membrane, and they exhibit intense photoluminescence from the NV centers with a concentration as high as 7 × 1016 cm−3 (0.4 ppm). These results suggest a route to the fabrication of diamond photonic nanostructures containing a dense ensemble of NV centers, which can be a key material for developing diamond-based light emitting and magnetic-field sensing devices.http://dx.doi.org/10.1063/5.0001922 |
| spellingShingle | Hisashi Sumikura Kazuyuki Hirama Katsuhiko Nishiguchi Akihiko Shinya Masaya Notomi Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing APL Materials |
| title | Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing |
| title_full | Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing |
| title_fullStr | Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing |
| title_full_unstemmed | Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing |
| title_short | Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing |
| title_sort | highly nitrogen vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing |
| url | http://dx.doi.org/10.1063/5.0001922 |
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