Ballistic two-dimensional lateral heterojunction bipolar transistor
We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a field effect transistor because it does not need a top...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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American Physical Society
2021-05-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.3.023158 |
| _version_ | 1797210971176960000 |
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| author | Leonardo Lucchesi Gaetano Calogero Gianluca Fiori Giuseppe Iannaccone |
| author_facet | Leonardo Lucchesi Gaetano Calogero Gianluca Fiori Giuseppe Iannaccone |
| author_sort | Leonardo Lucchesi |
| collection | DOAJ |
| description | We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a field effect transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode. As is typical of bipolar transistors, the collector current undergoes a tenfold increase for each 60 mV increase of the base voltage over several orders of magnitude at room temperature, without sophisticated optimization of the electrostatics. We present a detailed investigation based on self-consistent simulations of electrostatics and quantum transport for both electrons and holes of a p-n-p device using MoS_{2} for the 10-nm base and WSe_{2} for the emitter and collector. Our three-terminal device simulations confirm the working principle and a large current modulation I_{ON}/I_{OFF}∼10^{8} for ΔV_{EB}=0.5V. Assuming ballistic transport, we are able to achieve a current gain β∼10^{4} over several orders of magnitude of collector current and a cutoff frequency up to the THz range. The exploration of the rich world of bipolar nanoscale device concepts in two-dimensional materials is promising for their potential applications in electronics and optoelectronics. |
| first_indexed | 2024-04-24T10:19:04Z |
| format | Article |
| id | doaj.art-0ea128543bbf4fdab82fcea1a0e1fd75 |
| institution | Directory Open Access Journal |
| issn | 2643-1564 |
| language | English |
| last_indexed | 2024-04-24T10:19:04Z |
| publishDate | 2021-05-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review Research |
| spelling | doaj.art-0ea128543bbf4fdab82fcea1a0e1fd752024-04-12T17:10:15ZengAmerican Physical SocietyPhysical Review Research2643-15642021-05-013202315810.1103/PhysRevResearch.3.023158Ballistic two-dimensional lateral heterojunction bipolar transistorLeonardo LucchesiGaetano CalogeroGianluca FioriGiuseppe IannacconeWe propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a field effect transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode. As is typical of bipolar transistors, the collector current undergoes a tenfold increase for each 60 mV increase of the base voltage over several orders of magnitude at room temperature, without sophisticated optimization of the electrostatics. We present a detailed investigation based on self-consistent simulations of electrostatics and quantum transport for both electrons and holes of a p-n-p device using MoS_{2} for the 10-nm base and WSe_{2} for the emitter and collector. Our three-terminal device simulations confirm the working principle and a large current modulation I_{ON}/I_{OFF}∼10^{8} for ΔV_{EB}=0.5V. Assuming ballistic transport, we are able to achieve a current gain β∼10^{4} over several orders of magnitude of collector current and a cutoff frequency up to the THz range. The exploration of the rich world of bipolar nanoscale device concepts in two-dimensional materials is promising for their potential applications in electronics and optoelectronics.http://doi.org/10.1103/PhysRevResearch.3.023158 |
| spellingShingle | Leonardo Lucchesi Gaetano Calogero Gianluca Fiori Giuseppe Iannaccone Ballistic two-dimensional lateral heterojunction bipolar transistor Physical Review Research |
| title | Ballistic two-dimensional lateral heterojunction bipolar transistor |
| title_full | Ballistic two-dimensional lateral heterojunction bipolar transistor |
| title_fullStr | Ballistic two-dimensional lateral heterojunction bipolar transistor |
| title_full_unstemmed | Ballistic two-dimensional lateral heterojunction bipolar transistor |
| title_short | Ballistic two-dimensional lateral heterojunction bipolar transistor |
| title_sort | ballistic two dimensional lateral heterojunction bipolar transistor |
| url | http://doi.org/10.1103/PhysRevResearch.3.023158 |
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