Study of a Gate-Engineered Vertical TFET with GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> Heterojunction
It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the source region can improve the subthreshold performance of the vertical TFETs. This paper demonstrates a dual...
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MDPI AG
2021-03-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/6/1426 |
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| author | Haiwu Xie Yanning Chen Hongxia Liu Dan Guo |
| author_facet | Haiwu Xie Yanning Chen Hongxia Liu Dan Guo |
| author_sort | Haiwu Xie |
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| description | It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the source region can improve the subthreshold performance of the vertical TFETs. This paper demonstrates a dual material gate heterogeneous dielectric vertical TFET (DMG-HD-VTFET) with a lightly doped source-pocket. The proposed structure adopts a GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> heterojunction at the source and pocket to improve the band-to-band tunneling (BTBT) rate; at the same time, the gate electrode is divided into two parts, namely a tunnel gate (M1) and control gate (M2) with work functions Φ<sub>M1</sub> and Φ<sub>M2</sub>, where Φ<sub>M1</sub> > Φ<sub>M2</sub>. In addition, further performance enhancement in the proposed device is realized by a heterogeneous dielectric corresponding to a dual material gate. Simulation results indicate that DMG-HD-VTFET and HD-VTFET possess superior metrics in terms of DC (Direct Current) and RF (Radio Frequency) performance as compared with conventional VTFET. As a result, the ON-state current of 2.92 × 10<sup>−4</sup> A/μm, transconductance of 6.46 × 10<sup>−4</sup> S/μm, and average subthreshold swing (SS<sub>ave</sub>) of 18.1 mV/Dec at low drain voltage can be obtained. At the same time, DMG-HD-VTFET could achieve a maximum f<sub>T</sub> of 459 GHz at 0.72 V gate-to-source voltage (V<sub>gs</sub>) and a maximum gain bandwidth (GBW) of 35 GHz at V<sub>gs</sub> = 0.6 V, respectively. So, the proposed structure will have a great potential to boost the device performance of traditional vertical TFETs. |
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| spelling | doaj.art-0ea8e1f1b9224bd79c84e58e8632a6992023-11-21T10:34:39ZengMDPI AGMaterials1996-19442021-03-01146142610.3390/ma14061426Study of a Gate-Engineered Vertical TFET with GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> HeterojunctionHaiwu Xie0Yanning Chen1Hongxia Liu2Dan Guo3Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaBeijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, ChinaIt is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the source region can improve the subthreshold performance of the vertical TFETs. This paper demonstrates a dual material gate heterogeneous dielectric vertical TFET (DMG-HD-VTFET) with a lightly doped source-pocket. The proposed structure adopts a GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> heterojunction at the source and pocket to improve the band-to-band tunneling (BTBT) rate; at the same time, the gate electrode is divided into two parts, namely a tunnel gate (M1) and control gate (M2) with work functions Φ<sub>M1</sub> and Φ<sub>M2</sub>, where Φ<sub>M1</sub> > Φ<sub>M2</sub>. In addition, further performance enhancement in the proposed device is realized by a heterogeneous dielectric corresponding to a dual material gate. Simulation results indicate that DMG-HD-VTFET and HD-VTFET possess superior metrics in terms of DC (Direct Current) and RF (Radio Frequency) performance as compared with conventional VTFET. As a result, the ON-state current of 2.92 × 10<sup>−4</sup> A/μm, transconductance of 6.46 × 10<sup>−4</sup> S/μm, and average subthreshold swing (SS<sub>ave</sub>) of 18.1 mV/Dec at low drain voltage can be obtained. At the same time, DMG-HD-VTFET could achieve a maximum f<sub>T</sub> of 459 GHz at 0.72 V gate-to-source voltage (V<sub>gs</sub>) and a maximum gain bandwidth (GBW) of 35 GHz at V<sub>gs</sub> = 0.6 V, respectively. So, the proposed structure will have a great potential to boost the device performance of traditional vertical TFETs.https://www.mdpi.com/1996-1944/14/6/1426band-to-band tunneling (BTBT)GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> heterojunctiondual material gateheterogeneous dielectriclightly doped source-pocket |
| spellingShingle | Haiwu Xie Yanning Chen Hongxia Liu Dan Guo Study of a Gate-Engineered Vertical TFET with GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> Heterojunction Materials band-to-band tunneling (BTBT) GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> heterojunction dual material gate heterogeneous dielectric lightly doped source-pocket |
| title | Study of a Gate-Engineered Vertical TFET with GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> Heterojunction |
| title_full | Study of a Gate-Engineered Vertical TFET with GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> Heterojunction |
| title_fullStr | Study of a Gate-Engineered Vertical TFET with GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> Heterojunction |
| title_full_unstemmed | Study of a Gate-Engineered Vertical TFET with GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> Heterojunction |
| title_short | Study of a Gate-Engineered Vertical TFET with GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> Heterojunction |
| title_sort | study of a gate engineered vertical tfet with gasb gaas sub 0 5 sub sb sub 0 5 sub heterojunction |
| topic | band-to-band tunneling (BTBT) GaSb/GaAs<sub>0.5</sub>Sb<sub>0.5</sub> heterojunction dual material gate heterogeneous dielectric lightly doped source-pocket |
| url | https://www.mdpi.com/1996-1944/14/6/1426 |
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