Reduced graphene oxide on silicon-based structure as novel broadband photodetector
Abstract Heterojunction photodetector based on reduced graphene oxide (rGO) has been realized using a spin coating technique. The electrical and optical characterization of bare GO and thermally reduced GO thin films deposited on glass substrate has been carried out. Ultraviolet–visible–infrared tra...
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2021-06-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-021-92518-z |
| _version_ | 1818403258570375168 |
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| author | Carmela Bonavolontà Antonio Vettoliere Giuseppe Falco Carla Aramo Ivo Rendina Berardo Ruggiero Paolo Silvestrini Massimo Valentino |
| author_facet | Carmela Bonavolontà Antonio Vettoliere Giuseppe Falco Carla Aramo Ivo Rendina Berardo Ruggiero Paolo Silvestrini Massimo Valentino |
| author_sort | Carmela Bonavolontà |
| collection | DOAJ |
| description | Abstract Heterojunction photodetector based on reduced graphene oxide (rGO) has been realized using a spin coating technique. The electrical and optical characterization of bare GO and thermally reduced GO thin films deposited on glass substrate has been carried out. Ultraviolet–visible–infrared transmittance measurements of the GO and rGO thin films revealed broad absorption range, while the absorbance analysis evaluates rGO band gap of about 2.8 eV. The effect of GO reduction process on the photoresponse capability is reported. The current–voltage characteristics and the responsivity of rGO/n-Si based device have been investigated using laser diode wavelengths from UV up to IR spectral range. An energy band diagram of the heterojunction has been proposed to explain the current versus voltage characteristics. The device demonstrates a photoresponse at a broad spectral range with a maximum responsivity and detectivity of 0.20 A/W and 7 × 1010 cmHz/W, respectively. Notably, the obtained results indicate that the rGO based device can be useful for broadband radiation detection compatible with silicon device technology. |
| first_indexed | 2024-12-14T08:21:24Z |
| format | Article |
| id | doaj.art-0eabce4ab5894326b6d54cd501f4a033 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-14T08:21:24Z |
| publishDate | 2021-06-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-0eabce4ab5894326b6d54cd501f4a0332022-12-21T23:09:46ZengNature PortfolioScientific Reports2045-23222021-06-0111111010.1038/s41598-021-92518-zReduced graphene oxide on silicon-based structure as novel broadband photodetectorCarmela Bonavolontà0Antonio Vettoliere1Giuseppe Falco2Carla Aramo3Ivo Rendina4Berardo Ruggiero5Paolo Silvestrini6Massimo Valentino7Istituto Scienze Applicate e Sistemi Intelligenti “E. Caianiello” ISASI-CNRIstituto Scienze Applicate e Sistemi Intelligenti “E. Caianiello” ISASI-CNRIstituto Scienze Applicate e Sistemi Intelligenti “E. Caianiello” ISASI-CNRIstituto Nazionale Fisica Nucleare INFN Sez. Napoli Complesso UniversitarioIstituto Scienze Applicate e Sistemi Intelligenti “E. Caianiello” ISASI-CNRIstituto Scienze Applicate e Sistemi Intelligenti “E. Caianiello” ISASI-CNRIstituto Scienze Applicate e Sistemi Intelligenti “E. Caianiello” ISASI-CNRIstituto Scienze Applicate e Sistemi Intelligenti “E. Caianiello” ISASI-CNRAbstract Heterojunction photodetector based on reduced graphene oxide (rGO) has been realized using a spin coating technique. The electrical and optical characterization of bare GO and thermally reduced GO thin films deposited on glass substrate has been carried out. Ultraviolet–visible–infrared transmittance measurements of the GO and rGO thin films revealed broad absorption range, while the absorbance analysis evaluates rGO band gap of about 2.8 eV. The effect of GO reduction process on the photoresponse capability is reported. The current–voltage characteristics and the responsivity of rGO/n-Si based device have been investigated using laser diode wavelengths from UV up to IR spectral range. An energy band diagram of the heterojunction has been proposed to explain the current versus voltage characteristics. The device demonstrates a photoresponse at a broad spectral range with a maximum responsivity and detectivity of 0.20 A/W and 7 × 1010 cmHz/W, respectively. Notably, the obtained results indicate that the rGO based device can be useful for broadband radiation detection compatible with silicon device technology.https://doi.org/10.1038/s41598-021-92518-z |
| spellingShingle | Carmela Bonavolontà Antonio Vettoliere Giuseppe Falco Carla Aramo Ivo Rendina Berardo Ruggiero Paolo Silvestrini Massimo Valentino Reduced graphene oxide on silicon-based structure as novel broadband photodetector Scientific Reports |
| title | Reduced graphene oxide on silicon-based structure as novel broadband photodetector |
| title_full | Reduced graphene oxide on silicon-based structure as novel broadband photodetector |
| title_fullStr | Reduced graphene oxide on silicon-based structure as novel broadband photodetector |
| title_full_unstemmed | Reduced graphene oxide on silicon-based structure as novel broadband photodetector |
| title_short | Reduced graphene oxide on silicon-based structure as novel broadband photodetector |
| title_sort | reduced graphene oxide on silicon based structure as novel broadband photodetector |
| url | https://doi.org/10.1038/s41598-021-92518-z |
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