InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation
This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the <i>n</i>B<i>n</i> architecture, the detector structure was grown by molecular beam ep...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/10/12/806 |
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| author | Gamini Ariyawansa Joshua Duran Charles Reyner John Scheihing |
| author_facet | Gamini Ariyawansa Joshua Duran Charles Reyner John Scheihing |
| author_sort | Gamini Ariyawansa |
| collection | DOAJ |
| description | This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the <i>n</i>B<i>n</i> architecture, the detector structure was grown by molecular beam epitaxy and consists of a 5.5 µm thick <i>n</i>-type SLS as the infrared-absorbing element. Through detailed characterization, it was found that the detector exhibits a cut-off wavelength of 5.5 um, a peak external quantum efficiency (without anti-reflection coating) of 56%, and a dark current of 3.4 × 10<sup>-4</sup> A/cm<sup>2</sup>, which is a factor of 9 times Rule 07, at 160 K temperature. It was also found that the quantum efficiency increases with temperature and reaches ~56% at 140 K, which is probably due to the diffusion length being shorter than the absorber thickness at temperatures below 140 K. A 320 × 256 focal plane array was also fabricated and tested, revealing noise equivalent temperature difference of ~10 mK at 80 K with f/2.3 optics and 3 ms integration time. The overall performance indicates that these SLS detectors have the potential to reach the performance comparable to InSb detectors at temperatures higher than 80 K, enabling high-temperature operation. |
| first_indexed | 2024-12-23T20:17:14Z |
| format | Article |
| id | doaj.art-0ed1fc1b0a9d48408ddcfddb61ee5599 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-23T20:17:14Z |
| publishDate | 2019-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-0ed1fc1b0a9d48408ddcfddb61ee55992022-12-21T17:32:38ZengMDPI AGMicromachines2072-666X2019-11-01101280610.3390/mi10120806mi10120806InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature OperationGamini Ariyawansa0Joshua Duran1Charles Reyner2John Scheihing3Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH 45433, USAAir Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH 45433, USAAir Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH 45433, USAAir Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH 45433, USAThis paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the <i>n</i>B<i>n</i> architecture, the detector structure was grown by molecular beam epitaxy and consists of a 5.5 µm thick <i>n</i>-type SLS as the infrared-absorbing element. Through detailed characterization, it was found that the detector exhibits a cut-off wavelength of 5.5 um, a peak external quantum efficiency (without anti-reflection coating) of 56%, and a dark current of 3.4 × 10<sup>-4</sup> A/cm<sup>2</sup>, which is a factor of 9 times Rule 07, at 160 K temperature. It was also found that the quantum efficiency increases with temperature and reaches ~56% at 140 K, which is probably due to the diffusion length being shorter than the absorber thickness at temperatures below 140 K. A 320 × 256 focal plane array was also fabricated and tested, revealing noise equivalent temperature difference of ~10 mK at 80 K with f/2.3 optics and 3 ms integration time. The overall performance indicates that these SLS detectors have the potential to reach the performance comparable to InSb detectors at temperatures higher than 80 K, enabling high-temperature operation.https://www.mdpi.com/2072-666X/10/12/806infrared detectorstrained layer superlatticeinas/inassbabsorption coefficientbarrier detectorhigh operating temperature |
| spellingShingle | Gamini Ariyawansa Joshua Duran Charles Reyner John Scheihing InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation Micromachines infrared detector strained layer superlattice inas/inassb absorption coefficient barrier detector high operating temperature |
| title | InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation |
| title_full | InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation |
| title_fullStr | InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation |
| title_full_unstemmed | InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation |
| title_short | InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation |
| title_sort | inas inassb strained layer superlattice mid wavelength infrared detector for high temperature operation |
| topic | infrared detector strained layer superlattice inas/inassb absorption coefficient barrier detector high operating temperature |
| url | https://www.mdpi.com/2072-666X/10/12/806 |
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