Polarization Doping in a GaN-InN System—Ab Initio Simulation
Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it...
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2023-01-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/3/1227 |
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| author | Ashfaq Ahmad Pawel Strak Pawel Kempisty Konrad Sakowski Jacek Piechota Yoshihiro Kangawa Izabella Grzegory Michal Leszczynski Zbigniew R. Zytkiewicz Grzegorz Muziol Eva Monroy Agata Kaminska Stanislaw Krukowski |
| author_facet | Ashfaq Ahmad Pawel Strak Pawel Kempisty Konrad Sakowski Jacek Piechota Yoshihiro Kangawa Izabella Grzegory Michal Leszczynski Zbigniew R. Zytkiewicz Grzegorz Muziol Eva Monroy Agata Kaminska Stanislaw Krukowski |
| author_sort | Ashfaq Ahmad |
| collection | DOAJ |
| description | Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it could be obtained from a polarization difference and the concentration slope. It was shown that the GaN-InN polarization difference is changed by piezoelectric effects. The polarization difference is in agreement with the earlier obtained data despite the relatively narrow bandgap for the simulated system. The hole generation may be applied in the design of blue and green laser and light-emitting diodes. |
| first_indexed | 2024-03-11T09:35:04Z |
| format | Article |
| id | doaj.art-0f524f866f2b40e6b62f5fa87309fd46 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T09:35:04Z |
| publishDate | 2023-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-0f524f866f2b40e6b62f5fa87309fd462023-11-16T17:18:58ZengMDPI AGMaterials1996-19442023-01-01163122710.3390/ma16031227Polarization Doping in a GaN-InN System—Ab Initio SimulationAshfaq Ahmad0Pawel Strak1Pawel Kempisty2Konrad Sakowski3Jacek Piechota4Yoshihiro Kangawa5Izabella Grzegory6Michal Leszczynski7Zbigniew R. Zytkiewicz8Grzegorz Muziol9Eva Monroy10Agata Kaminska11Stanislaw Krukowski12Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandResearch Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580, JapanInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandUniversity Grenoble-Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 17 av. des Martyrs, 38000 Grenoble, FranceInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandInstitute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, PolandPolarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it could be obtained from a polarization difference and the concentration slope. It was shown that the GaN-InN polarization difference is changed by piezoelectric effects. The polarization difference is in agreement with the earlier obtained data despite the relatively narrow bandgap for the simulated system. The hole generation may be applied in the design of blue and green laser and light-emitting diodes.https://www.mdpi.com/1996-1944/16/3/1227polarization dopingnitridesInGaNgraded layer |
| spellingShingle | Ashfaq Ahmad Pawel Strak Pawel Kempisty Konrad Sakowski Jacek Piechota Yoshihiro Kangawa Izabella Grzegory Michal Leszczynski Zbigniew R. Zytkiewicz Grzegorz Muziol Eva Monroy Agata Kaminska Stanislaw Krukowski Polarization Doping in a GaN-InN System—Ab Initio Simulation Materials polarization doping nitrides InGaN graded layer |
| title | Polarization Doping in a GaN-InN System—Ab Initio Simulation |
| title_full | Polarization Doping in a GaN-InN System—Ab Initio Simulation |
| title_fullStr | Polarization Doping in a GaN-InN System—Ab Initio Simulation |
| title_full_unstemmed | Polarization Doping in a GaN-InN System—Ab Initio Simulation |
| title_short | Polarization Doping in a GaN-InN System—Ab Initio Simulation |
| title_sort | polarization doping in a gan inn system ab initio simulation |
| topic | polarization doping nitrides InGaN graded layer |
| url | https://www.mdpi.com/1996-1944/16/3/1227 |
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