Polarization Doping in a GaN-InN System—Ab Initio Simulation

Polarization Doping in a GaN-InN System—Ab Initio Simulation

Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it...

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Bibliographic Details
Main Authors: Ashfaq Ahmad, Pawel Strak, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Yoshihiro Kangawa, Izabella Grzegory, Michal Leszczynski, Zbigniew R. Zytkiewicz, Grzegorz Muziol, Eva Monroy, Agata Kaminska, Stanislaw Krukowski
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Materials
Subjects:
polarization doping
nitrides
InGaN
graded layer
Online Access:https://www.mdpi.com/1996-1944/16/3/1227

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