Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors
A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annea...
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MDPI AG
2022-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/14/2397 |
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| author | Chong Wang Liang Guo Mingzhou Lei Chao Wang Xuefeng Chu Fan Yang Xiaohong Gao Huan Wamg Yaodan Chi Xiaotian Yang |
| author_facet | Chong Wang Liang Guo Mingzhou Lei Chao Wang Xuefeng Chu Fan Yang Xiaohong Gao Huan Wamg Yaodan Chi Xiaotian Yang |
| author_sort | Chong Wang |
| collection | DOAJ |
| description | A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn<sup>2+</sup> is presented. Electrical results show that the TFT annealed at 600 °C exhibits the best performance. It exhibits high saturation mobilities (μ<sub>SAT</sub>) up to 12.64 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, a threshold voltage (V<sub>TH</sub>) of −6.61 V, a large on/off current ratio (I<sub>on</sub>/I<sub>off</sub>) of 1.87 × 10<sup>9</sup>, and an excellent subthreshold swing (SS) of 0.79 V/Decade. |
| first_indexed | 2024-03-09T10:14:05Z |
| format | Article |
| id | doaj.art-0f80dcec98f7442d879e5c6d7c0bbc7b |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T10:14:05Z |
| publishDate | 2022-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-0f80dcec98f7442d879e5c6d7c0bbc7b2023-12-01T22:31:07ZengMDPI AGNanomaterials2079-49912022-07-011214239710.3390/nano12142397Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film TransistorsChong Wang0Liang Guo1Mingzhou Lei2Chao Wang3Xuefeng Chu4Fan Yang5Xiaohong Gao6Huan Wamg7Yaodan Chi8Xiaotian Yang9Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, ChinaKey Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, ChinaKey Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, ChinaKey Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, ChinaKey Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, ChinaKey Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, ChinaKey Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, ChinaKey Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, ChinaKey Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, ChinaKey Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Changchun 130118, ChinaA high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn<sup>2+</sup> is presented. Electrical results show that the TFT annealed at 600 °C exhibits the best performance. It exhibits high saturation mobilities (μ<sub>SAT</sub>) up to 12.64 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, a threshold voltage (V<sub>TH</sub>) of −6.61 V, a large on/off current ratio (I<sub>on</sub>/I<sub>off</sub>) of 1.87 × 10<sup>9</sup>, and an excellent subthreshold swing (SS) of 0.79 V/Decade.https://www.mdpi.com/2079-4991/12/14/2397thin-film transistorannealing treatmentXPS analysis |
| spellingShingle | Chong Wang Liang Guo Mingzhou Lei Chao Wang Xuefeng Chu Fan Yang Xiaohong Gao Huan Wamg Yaodan Chi Xiaotian Yang Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors Nanomaterials thin-film transistor annealing treatment XPS analysis |
| title | Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors |
| title_full | Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors |
| title_fullStr | Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors |
| title_full_unstemmed | Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors |
| title_short | Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors |
| title_sort | effect of annealing temperature on electrical properties of zto thin film transistors |
| topic | thin-film transistor annealing treatment XPS analysis |
| url | https://www.mdpi.com/2079-4991/12/14/2397 |
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