Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annea...

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Bibliographic Details
Main Authors: Chong Wang, Liang Guo, Mingzhou Lei, Chao Wang, Xuefeng Chu, Fan Yang, Xiaohong Gao, Huan Wamg, Yaodan Chi, Xiaotian Yang
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Nanomaterials
Subjects:
thin-film transistor
annealing treatment
XPS analysis
Online Access:https://www.mdpi.com/2079-4991/12/14/2397

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