Effective polycrystalline sensor of ultraviolet radiation
Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrys...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2017-10-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n3_2017/P335-339abstr.html |
| _version_ | 1818143018729865216 |
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| author | S.Yu. Pavelets Yu.N. Bobrenko T.V. Semikina K.B. Krulikovska G.I. Sheremetova В.S. Аtdaev M.V. Yaroshenko |
| author_facet | S.Yu. Pavelets Yu.N. Bobrenko T.V. Semikina K.B. Krulikovska G.I. Sheremetova В.S. Аtdaev M.V. Yaroshenko |
| author_sort | S.Yu. Pavelets |
| collection | DOAJ |
| description | Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for high stability of the parameters inherent to the p-Cu1.8S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component. |
| first_indexed | 2024-12-11T11:25:00Z |
| format | Article |
| id | doaj.art-0f87240fe46b4ed8a0bdc625ffd065be |
| institution | Directory Open Access Journal |
| issn | 1560-8034 1605-6582 |
| language | English |
| last_indexed | 2024-12-11T11:25:00Z |
| publishDate | 2017-10-01 |
| publisher | National Academy of Sciences of Ukraine. Institute of Semi conductor physics. |
| record_format | Article |
| series | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| spelling | doaj.art-0f87240fe46b4ed8a0bdc625ffd065be2022-12-22T01:09:02ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics.Semiconductor Physics, Quantum Electronics & Optoelectronics1560-80341605-65822017-10-0120333533910.15407/spqeo20.03.335Effective polycrystalline sensor of ultraviolet radiationS.Yu. Pavelets0Yu.N. Bobrenko1T.V. Semikina2K.B. Krulikovska3G.I. Sheremetova4В.S. Аtdaev5M.V. Yaroshenko6V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, UkraineDeposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for high stability of the parameters inherent to the p-Cu1.8S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component.http://journal-spqeo.org.ua/n3_2017/P335-339abstr.htmlpolycrystalline UV sensorcadmium sulfidecopper chalcogenidesurface-barrier structureenergy band offset diagram |
| spellingShingle | S.Yu. Pavelets Yu.N. Bobrenko T.V. Semikina K.B. Krulikovska G.I. Sheremetova В.S. Аtdaev M.V. Yaroshenko Effective polycrystalline sensor of ultraviolet radiation Semiconductor Physics, Quantum Electronics & Optoelectronics polycrystalline UV sensor cadmium sulfide copper chalcogenide surface-barrier structure energy band offset diagram |
| title | Effective polycrystalline sensor of ultraviolet radiation |
| title_full | Effective polycrystalline sensor of ultraviolet radiation |
| title_fullStr | Effective polycrystalline sensor of ultraviolet radiation |
| title_full_unstemmed | Effective polycrystalline sensor of ultraviolet radiation |
| title_short | Effective polycrystalline sensor of ultraviolet radiation |
| title_sort | effective polycrystalline sensor of ultraviolet radiation |
| topic | polycrystalline UV sensor cadmium sulfide copper chalcogenide surface-barrier structure energy band offset diagram |
| url | http://journal-spqeo.org.ua/n3_2017/P335-339abstr.html |
| work_keys_str_mv | AT syupavelets effectivepolycrystallinesensorofultravioletradiation AT yunbobrenko effectivepolycrystallinesensorofultravioletradiation AT tvsemikina effectivepolycrystallinesensorofultravioletradiation AT kbkrulikovska effectivepolycrystallinesensorofultravioletradiation AT gisheremetova effectivepolycrystallinesensorofultravioletradiation AT vsatdaev effectivepolycrystallinesensorofultravioletradiation AT mvyaroshenko effectivepolycrystallinesensorofultravioletradiation |