Sensitivity to pressure and light of a depletion-mode field-effect transistor
There are presented the results of experimental investigation of sensitivity of field effect transistor in two-terminal connection mode with pinched-off channel to the impact of pressure and light. It is shown that the depletion-mode field effect transistor has a high sensitivity to pressure and lig...
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| Format: | Article |
| Language: | English |
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EDP Sciences
2023-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/26/e3sconf_uesf2023_07016.pdf |