The Specialized RF Elements Library for Trusted Transceiver VLSI Design

Results of designing the specialized RF elements library intended for use in the CMOS 180 nm process are presented. The RF library includes a set of RF MOSFETs for amplifiers and switches design,  three types of varactors based on the MOS-structure, spiral inductors, MIM-capacitors and other element...

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Bibliographic Details
Main Authors: Denis I. Sotskov, Alexey V. Zubakov, Nikolay A. Usachev, Nikita M. Zhidkov, Alexander G. Kuznetsov, Alexander V. Ermakov, Alexander Y. Nikiforov
Format: Article
Language:English
Published: Joint Stock Company "Experimental Scientific and Production Association SPELS 2023-09-01
Series:Безопасность информационных технологий
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Online Access:https://bit.spels.ru/index.php/bit/article/view/1533
Description
Summary:Results of designing the specialized RF elements library intended for use in the CMOS 180 nm process are presented. The RF library includes a set of RF MOSFETs for amplifiers and switches design,  three types of varactors based on the MOS-structure, spiral inductors, MIM-capacitors and other elements. The RF library is intended for use in combination with CAD Cadence Virtuoso IC and is focused on designing a set of amplifiers, frequency oscillators and convertors, controlled attenuators and phase shifters microwave IP-blocks of the transceiver VLSI. A test chip is developed with using the presented RF library, focused on conducting research by probe methods and containing 13 types of basic elements and specialized structures for the RF characterization of the domestic CMOS 180 nm process.
ISSN:2074-7128
2074-7136