Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer
Investigation of germanium gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with Al2O3 dielectric layer has been successfully performed. The device demonstrates a normally-on characteristics, whose maximum drain-source current density, threshold voltage, maximum transcon...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2022-12-01
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| Series: | Functional Diamond |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/26941112.2022.2159775 |
| _version_ | 1827794832068706304 |
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| author | Zhang Minghui Wang Wei Wen Feng Lin Fang Chen Genqiang Wang Fei He Shi Wang Yanfeng Fan Shuwei Bu Renan Min Tai Yu Cui Wang Hongxing |
| author_facet | Zhang Minghui Wang Wei Wen Feng Lin Fang Chen Genqiang Wang Fei He Shi Wang Yanfeng Fan Shuwei Bu Renan Min Tai Yu Cui Wang Hongxing |
| author_sort | Zhang Minghui |
| collection | DOAJ |
| description | Investigation of germanium gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with Al2O3 dielectric layer has been successfully performed. The device demonstrates a normally-on characteristics, whose maximum drain-source current density, threshold voltage, maximum transconductance, on/off ratio, subthreshold swing, capacitance, carrier density, saturation carrier mobility, fixed charge density and interface state density are of −37.3 mA/mm, 0.22 V, 6.42 mS/mm, 108, 134 mV/dec, 0.33 μF/cm2, 9.83 × 1012 cm−2, 97.9 cm2/V·s, 7.63 × 1012 cm−2 and 2.56 × 1012 cm−2·eV−1, respectively. This work is significant to the development of H-terminated diamond FET. |
| first_indexed | 2024-03-11T18:39:28Z |
| format | Article |
| id | doaj.art-0fe7f312b12e46c4a6bfc6f484fdd1b7 |
| institution | Directory Open Access Journal |
| issn | 2694-1120 |
| language | English |
| last_indexed | 2024-03-11T18:39:28Z |
| publishDate | 2022-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Functional Diamond |
| spelling | doaj.art-0fe7f312b12e46c4a6bfc6f484fdd1b72023-10-12T13:43:53ZengTaylor & Francis GroupFunctional Diamond2694-11202022-12-012125826210.1080/26941112.2022.21597752159775Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layerZhang Minghui0Wang Wei1Wen Feng2Lin Fang3Chen Genqiang4Wang Fei5He Shi6Wang Yanfeng7Fan Shuwei8Bu Renan9Min Tai10Yu Cui11Wang Hongxing12Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityKey Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityState Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi’an Jiaotong UniversityNational Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research InstituteKey Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong UniversityInvestigation of germanium gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with Al2O3 dielectric layer has been successfully performed. The device demonstrates a normally-on characteristics, whose maximum drain-source current density, threshold voltage, maximum transconductance, on/off ratio, subthreshold swing, capacitance, carrier density, saturation carrier mobility, fixed charge density and interface state density are of −37.3 mA/mm, 0.22 V, 6.42 mS/mm, 108, 134 mV/dec, 0.33 μF/cm2, 9.83 × 1012 cm−2, 97.9 cm2/V·s, 7.63 × 1012 cm−2 and 2.56 × 1012 cm−2·eV−1, respectively. This work is significant to the development of H-terminated diamond FET.http://dx.doi.org/10.1080/26941112.2022.2159775hydrogen-terminated diamondfield effect transistorgermanium |
| spellingShingle | Zhang Minghui Wang Wei Wen Feng Lin Fang Chen Genqiang Wang Fei He Shi Wang Yanfeng Fan Shuwei Bu Renan Min Tai Yu Cui Wang Hongxing Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer Functional Diamond hydrogen-terminated diamond field effect transistor germanium |
| title | Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer |
| title_full | Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer |
| title_fullStr | Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer |
| title_full_unstemmed | Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer |
| title_short | Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer |
| title_sort | germanium gate hydrogen terminated diamond field effect transistor with al2o3 dielectric layer |
| topic | hydrogen-terminated diamond field effect transistor germanium |
| url | http://dx.doi.org/10.1080/26941112.2022.2159775 |
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