Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

Investigation of germanium gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with Al2O3 dielectric layer has been successfully performed. The device demonstrates a normally-on characteristics, whose maximum drain-source current density, threshold voltage, maximum transcon...

Полное описание

Библиографические подробности
Главные авторы: Zhang Minghui, Wang Wei, Wen Feng, Lin Fang, Chen Genqiang, Wang Fei, He Shi, Wang Yanfeng, Fan Shuwei, Bu Renan, Min Tai, Yu Cui, Wang Hongxing
Формат: Статья
Язык:English
Опубликовано: Taylor & Francis Group 2022-12-01
Серии:Functional Diamond
Предметы:
hydrogen-terminated diamond
field effect transistor
germanium
Online-ссылка:http://dx.doi.org/10.1080/26941112.2022.2159775

Internet

http://dx.doi.org/10.1080/26941112.2022.2159775

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