Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers

Elaboration of the technology of novel photolithographic masks fabricated on sapphire substrates for UV and DUV application was described. The main technological steps of mask fabrication as Cr metallization deposition, selection of resist for lithography and Cr layer etching were developed and repo...

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Main Authors: Agnieszka Zawadzka, Joanna Prazmowska, Regina Paszkiewicz
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2019-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/3357
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author Agnieszka Zawadzka
Joanna Prazmowska
Regina Paszkiewicz
author_facet Agnieszka Zawadzka
Joanna Prazmowska
Regina Paszkiewicz
author_sort Agnieszka Zawadzka
collection DOAJ
description Elaboration of the technology of novel photolithographic masks fabricated on sapphire substrates for UV and DUV application was described. The main technological steps of mask fabrication as Cr metallization deposition, selection of resist for lithography and Cr layer etching were developed and reported. The etching of Cr films was carried out through resist mask. Detailed study of Cr layer etching process was performed using different solutions such as KMnO4, HCl and ceric ammonium nitrate-based solutions to obtain good-quality structures with the smallest possible undercut of Cr layer and smooth edge. The mask fabrication process was validated by fabrication of test structures of microelectronic device using photolithography technique.
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spelling doaj.art-0fe8303f3c6e469596a70aff28b701be2023-05-14T20:50:13ZengVSB-Technical University of OstravaAdvances in Electrical and Electronic Engineering1336-13761804-31192019-01-0117337437810.15598/aeee.v17i3.33571064Photolithographic Mask Fabrication Process Using Cr/Sapphire CarriersAgnieszka Zawadzka0Joanna Prazmowska1Regina Paszkiewicz2Wroclaw University of Science and TechnologyDepartment of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, PolandDepartment of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, PolandElaboration of the technology of novel photolithographic masks fabricated on sapphire substrates for UV and DUV application was described. The main technological steps of mask fabrication as Cr metallization deposition, selection of resist for lithography and Cr layer etching were developed and reported. The etching of Cr films was carried out through resist mask. Detailed study of Cr layer etching process was performed using different solutions such as KMnO4, HCl and ceric ammonium nitrate-based solutions to obtain good-quality structures with the smallest possible undercut of Cr layer and smooth edge. The mask fabrication process was validated by fabrication of test structures of microelectronic device using photolithography technique.http://advances.utc.sk/index.php/AEEE/article/view/3357chromium etchingphotolithography mask fabrication, sapphire substrate.
spellingShingle Agnieszka Zawadzka
Joanna Prazmowska
Regina Paszkiewicz
Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers
Advances in Electrical and Electronic Engineering
chromium etching
photolithography mask fabrication, sapphire substrate.
title Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers
title_full Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers
title_fullStr Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers
title_full_unstemmed Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers
title_short Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers
title_sort photolithographic mask fabrication process using cr sapphire carriers
topic chromium etching
photolithography mask fabrication, sapphire substrate.
url http://advances.utc.sk/index.php/AEEE/article/view/3357
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AT joannaprazmowska photolithographicmaskfabricationprocessusingcrsapphirecarriers
AT reginapaszkiewicz photolithographicmaskfabricationprocessusingcrsapphirecarriers