Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array
Abstract Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocity. However, the presence of undesired CNT bundles in the...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-02-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300684 |
| _version_ | 1797296251291566080 |
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| author | Tzu‐Ang Chao Chih‐Piao Chuu San‐Lin Liew I‐Fan Hu Sheng‐Kai Su Shengman Li Shih‐Chu Lin Vincent D.‐H. Hou H.‐S. Philip Wong Iuliana Radu Wen‐Hao Chang Gregory Pitner Han Wang |
| author_facet | Tzu‐Ang Chao Chih‐Piao Chuu San‐Lin Liew I‐Fan Hu Sheng‐Kai Su Shengman Li Shih‐Chu Lin Vincent D.‐H. Hou H.‐S. Philip Wong Iuliana Radu Wen‐Hao Chang Gregory Pitner Han Wang |
| author_sort | Tzu‐Ang Chao |
| collection | DOAJ |
| description | Abstract Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocity. However, the presence of undesired CNT bundles in the CNT arrays for wafer‐scale device fabrication, even when utilizing the state‐of‐the‐art dimension‐limited self‐alignment (DLSA) method, poses challenges. These CNT bundles degrade the transistor gate's efficiency in controlling the flow of charge carriers in the CNT channel, leading to pronounced device‐to‐device variability. Here, a novel method is introduced to alleviate bundling in CNT arrays assembled via DLSA, by involving small molecule additive to screen the attractive van der Waals force between neighboring CNTs during the DLSA process, resulting in over 50% reduction in CNT bundling. Furthermore, a pioneering methodology for quantifying CNT bundles is presented and employed experimentally to assess bundles in dense CNT arrays assembled by DLSA using transmission electron microscopy. Both experimental data and molecular dynamics simulation reveal that CNT bundling originates from van der Waals attraction between CNTs, and the disturbed liquid‐liquid interface by accumulating excess polar molecules. These findings illuminate new pathways for realizing dense, bundle‐free CNT arrays. |
| first_indexed | 2024-03-07T22:00:46Z |
| format | Article |
| id | doaj.art-0fe972dcf6f249529d0f673eb7ad5042 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-07T22:00:46Z |
| publishDate | 2024-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-0fe972dcf6f249529d0f673eb7ad50422024-02-24T04:11:01ZengWiley-VCHAdvanced Materials Interfaces2196-73502024-02-01116n/an/a10.1002/admi.202300684Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube ArrayTzu‐Ang Chao0Chih‐Piao Chuu1San‐Lin Liew2I‐Fan Hu3Sheng‐Kai Su4Shengman Li5Shih‐Chu Lin6Vincent D.‐H. Hou7H.‐S. Philip Wong8Iuliana Radu9Wen‐Hao Chang10Gregory Pitner11Han Wang12Corporate Research Taiwan Semiconductor Manufacturing Company 168, Park Ave. II Hsinchu 300 TaiwanCorporate Research Taiwan Semiconductor Manufacturing Company 168, Park Ave. II Hsinchu 300 TaiwanCorporate Research Taiwan Semiconductor Manufacturing Company 168, Park Ave. II Hsinchu 300 TaiwanCorporate Research Taiwan Semiconductor Manufacturing Company 168, Park Ave. II Hsinchu 300 TaiwanCorporate Research Taiwan Semiconductor Manufacturing Company 168, Park Ave. II Hsinchu 300 TaiwanDepartment of Electrical Engineering Stanford University 450 Jane Stanford Way Stanford CA CA 94305 USADepartment of Electrophysics National Yang Ming Chiao Tung University 1001 University Raod Hsinchu 300 TaiwanCorporate Research Taiwan Semiconductor Manufacturing Company 168, Park Ave. II Hsinchu 300 TaiwanCorporate Research Taiwan Semiconductor Manufacturing Company 168, Park Ave. II Hsinchu 300 TaiwanCorporate Research Taiwan Semiconductor Manufacturing Company 168, Park Ave. II Hsinchu 300 TaiwanDepartment of Electrophysics National Yang Ming Chiao Tung University 1001 University Raod Hsinchu 300 TaiwanCorporate Research Taiwan Semiconductor Manufacturing Company 2851 Junction Ave. San Jose CA CA 95134 USACorporate Research Taiwan Semiconductor Manufacturing Company 2851 Junction Ave. San Jose CA CA 95134 USAAbstract Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocity. However, the presence of undesired CNT bundles in the CNT arrays for wafer‐scale device fabrication, even when utilizing the state‐of‐the‐art dimension‐limited self‐alignment (DLSA) method, poses challenges. These CNT bundles degrade the transistor gate's efficiency in controlling the flow of charge carriers in the CNT channel, leading to pronounced device‐to‐device variability. Here, a novel method is introduced to alleviate bundling in CNT arrays assembled via DLSA, by involving small molecule additive to screen the attractive van der Waals force between neighboring CNTs during the DLSA process, resulting in over 50% reduction in CNT bundling. Furthermore, a pioneering methodology for quantifying CNT bundles is presented and employed experimentally to assess bundles in dense CNT arrays assembled by DLSA using transmission electron microscopy. Both experimental data and molecular dynamics simulation reveal that CNT bundling originates from van der Waals attraction between CNTs, and the disturbed liquid‐liquid interface by accumulating excess polar molecules. These findings illuminate new pathways for realizing dense, bundle‐free CNT arrays.https://doi.org/10.1002/admi.202300684carbon nanotubecarbon nanotube field‐effect transistorinterfacial assemblylow dimensional materials |
| spellingShingle | Tzu‐Ang Chao Chih‐Piao Chuu San‐Lin Liew I‐Fan Hu Sheng‐Kai Su Shengman Li Shih‐Chu Lin Vincent D.‐H. Hou H.‐S. Philip Wong Iuliana Radu Wen‐Hao Chang Gregory Pitner Han Wang Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array Advanced Materials Interfaces carbon nanotube carbon nanotube field‐effect transistor interfacial assembly low dimensional materials |
| title | Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array |
| title_full | Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array |
| title_fullStr | Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array |
| title_full_unstemmed | Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array |
| title_short | Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array |
| title_sort | small molecule additives to suppress bundling in dimensional limited self alignment method for high density aligned carbon nanotube array |
| topic | carbon nanotube carbon nanotube field‐effect transistor interfacial assembly low dimensional materials |
| url | https://doi.org/10.1002/admi.202300684 |
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