Semiconductors (LEDs) quality control based in high-resolution 3D X-ray microscope
Electronic devices are getting smaller each time and the technology, increasingly complex. Commonly found problems such as reflow soldering and open solder connections, which are mostly difficult to detect by conventional means like X-ray images or physical cut on the transverse section. Along with...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Brazilian Radiation Protection Society (Sociedade Brasileira de Proteção Radiológica, SBPR)
2022-12-01
|
| Series: | Brazilian Journal of Radiation Sciences |
| Subjects: | |
| Online Access: | https://bjrs.org.br/revista/index.php/REVISTA/article/view/1955 |
| _version_ | 1811206688054706176 |
|---|---|
| author | Diogo da Costa Marcelino dos Anjos Davi Oliveira Alessandra Machado Joaquim Assis Ricardo Lopes |
| author_facet | Diogo da Costa Marcelino dos Anjos Davi Oliveira Alessandra Machado Joaquim Assis Ricardo Lopes |
| author_sort | Diogo da Costa |
| collection | DOAJ |
| description |
Electronic devices are getting smaller each time and the technology, increasingly complex. Commonly found problems such as reflow soldering and open solder connections, which are mostly difficult to detect by conventional means like X-ray images or physical cut on the transverse section. Along with the challenge of finding these flaws, there are also some problems that may arise on the exposure of them using destructive analysis techniques, such as the fiscal transversal cut and chemical decapsulation. Both techniques may induce damage not relevant to where that flaw is located or remove evidence of a flaw or a damaged place. The high-resolution 3D x-ray computerized microtomography provides a powerful alternative solution and non-invasive to issues that involve the analysis of semiconductor devices. This research contemplates the study of semiconductor’s integrity (LED’s) based of X-ray computerized microtomography. The SkyScan 1272 Bruker commercial equipment was used for analysis of the P-N junction in a set with 10 LEDs, under non polarized conditions and upon electrical overstress effects on its contact terminals. The P-N junction had their dimensions analyzed on the three spatial directions (x, y and z) and studied on the effects that occur when a LED is damaged. The study methodology of integrity regarding computerized microtomography have shown consist outcomes that allowed the understanding of what occurs on the LED's structure and investigates matters that allows decisions to be made regarding its quality, and so, accomplishing the goals designated on this research.
|
| first_indexed | 2024-04-12T03:52:34Z |
| format | Article |
| id | doaj.art-1005a74354b2483a83dac4907b053c6b |
| institution | Directory Open Access Journal |
| issn | 2319-0612 |
| language | English |
| last_indexed | 2024-04-12T03:52:34Z |
| publishDate | 2022-12-01 |
| publisher | Brazilian Radiation Protection Society (Sociedade Brasileira de Proteção Radiológica, SBPR) |
| record_format | Article |
| series | Brazilian Journal of Radiation Sciences |
| spelling | doaj.art-1005a74354b2483a83dac4907b053c6b2022-12-22T03:48:57ZengBrazilian Radiation Protection Society (Sociedade Brasileira de Proteção Radiológica, SBPR)Brazilian Journal of Radiation Sciences2319-06122022-12-01103B10.15392/2319-0612.2022.1955Semiconductors (LEDs) quality control based in high-resolution 3D X-ray microscopeDiogo da Costa0Marcelino dos AnjosDavi OliveiraAlessandra MachadoJoaquim AssisRicardo LopesUERJ Electronic devices are getting smaller each time and the technology, increasingly complex. Commonly found problems such as reflow soldering and open solder connections, which are mostly difficult to detect by conventional means like X-ray images or physical cut on the transverse section. Along with the challenge of finding these flaws, there are also some problems that may arise on the exposure of them using destructive analysis techniques, such as the fiscal transversal cut and chemical decapsulation. Both techniques may induce damage not relevant to where that flaw is located or remove evidence of a flaw or a damaged place. The high-resolution 3D x-ray computerized microtomography provides a powerful alternative solution and non-invasive to issues that involve the analysis of semiconductor devices. This research contemplates the study of semiconductor’s integrity (LED’s) based of X-ray computerized microtomography. The SkyScan 1272 Bruker commercial equipment was used for analysis of the P-N junction in a set with 10 LEDs, under non polarized conditions and upon electrical overstress effects on its contact terminals. The P-N junction had their dimensions analyzed on the three spatial directions (x, y and z) and studied on the effects that occur when a LED is damaged. The study methodology of integrity regarding computerized microtomography have shown consist outcomes that allowed the understanding of what occurs on the LED's structure and investigates matters that allows decisions to be made regarding its quality, and so, accomplishing the goals designated on this research. https://bjrs.org.br/revista/index.php/REVISTA/article/view/1955Computed microtomographySemiconductor integrityLED microtomography. |
| spellingShingle | Diogo da Costa Marcelino dos Anjos Davi Oliveira Alessandra Machado Joaquim Assis Ricardo Lopes Semiconductors (LEDs) quality control based in high-resolution 3D X-ray microscope Brazilian Journal of Radiation Sciences Computed microtomography Semiconductor integrity LED microtomography. |
| title | Semiconductors (LEDs) quality control based in high-resolution 3D X-ray microscope |
| title_full | Semiconductors (LEDs) quality control based in high-resolution 3D X-ray microscope |
| title_fullStr | Semiconductors (LEDs) quality control based in high-resolution 3D X-ray microscope |
| title_full_unstemmed | Semiconductors (LEDs) quality control based in high-resolution 3D X-ray microscope |
| title_short | Semiconductors (LEDs) quality control based in high-resolution 3D X-ray microscope |
| title_sort | semiconductors leds quality control based in high resolution 3d x ray microscope |
| topic | Computed microtomography Semiconductor integrity LED microtomography. |
| url | https://bjrs.org.br/revista/index.php/REVISTA/article/view/1955 |
| work_keys_str_mv | AT diogodacosta semiconductorsledsqualitycontrolbasedinhighresolution3dxraymicroscope AT marcelinodosanjos semiconductorsledsqualitycontrolbasedinhighresolution3dxraymicroscope AT davioliveira semiconductorsledsqualitycontrolbasedinhighresolution3dxraymicroscope AT alessandramachado semiconductorsledsqualitycontrolbasedinhighresolution3dxraymicroscope AT joaquimassis semiconductorsledsqualitycontrolbasedinhighresolution3dxraymicroscope AT ricardolopes semiconductorsledsqualitycontrolbasedinhighresolution3dxraymicroscope |