Study on the formation of current characteristics of a silicon photodiode with rectifying barriers
The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals.
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2013-02-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2013/1_2013/pdf/02.zip |