Study on the formation of current characteristics of a silicon photodiode with rectifying barriers
The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals.
Main Authors: | Karimov A. V., Yodgorova D. M., Giyasova F. A., Mirdzhalilova M. A., Asanova G. O., Abdulkhaev O. A., Mukhutdinov Zh. F. |
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Format: | Article |
Language: | English |
Published: |
Politehperiodika
2013-02-01
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Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
Subjects: | |
Online Access: | http://www.tkea.com.ua/tkea/2013/1_2013/pdf/02.zip |
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