Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory
In this study, a bilayer HfO2/ZrO2 thin film structure was deposited by radio frequency sputtering at room temperature (RT) to investigate the resistive switching (RS) characteristics, mechanism as well as their reproducibility. Bilayer HfO2/ZrO2 structured device > 103 DC switching cycles at RT,...
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| Format: | Article |
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Elsevier
2020-09-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379720317423 |
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| author | Muhammad Ismail Zahida Batool Khalid Mahmood Anwar Manzoor Rana Byung-Do Yang Sungjun Kim |
| author_facet | Muhammad Ismail Zahida Batool Khalid Mahmood Anwar Manzoor Rana Byung-Do Yang Sungjun Kim |
| author_sort | Muhammad Ismail |
| collection | DOAJ |
| description | In this study, a bilayer HfO2/ZrO2 thin film structure was deposited by radio frequency sputtering at room temperature (RT) to investigate the resistive switching (RS) characteristics, mechanism as well as their reproducibility. Bilayer HfO2/ZrO2 structured device > 103 DC switching cycles at RT, and > 10 ON/OFF ratio. The RS uniformity and mechanism were evaluated by Gaussian data fitting and distributions of oxygen vacancies (VOs) in the HfO2 and ZrO2 layers through X-ray photo electron spectroscopy (XPS) analysis, respectively. Because of higher thermal conductivity (2.7Wm-1K-1) and lower Gibbs free energy (ΔGo=-1100kJ/mol) of ZrO2 layer as compared to those of HfO2 layer (1.1Wm-1K-1,ΔGo=-1010.8kJ/mol), an easier reduction and oxidation of filaments took place by exchanging oxygen ions with each other (ZrO2/HfO2). A VOs-based filamentary model has been proposed to explain RS mechanism. Furthermore, a current transport mechanism is noted be based on Schottky emission in the high field region of the high resistance states (HRS). |
| first_indexed | 2024-12-20T21:34:25Z |
| format | Article |
| id | doaj.art-1031866856a04b61bd46244e9cfc7eb5 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-20T21:34:25Z |
| publishDate | 2020-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-1031866856a04b61bd46244e9cfc7eb52022-12-21T19:25:59ZengElsevierResults in Physics2211-37972020-09-0118103275Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memoryMuhammad Ismail0Zahida Batool1Khalid Mahmood2Anwar Manzoor Rana3Byung-Do Yang4Sungjun Kim5School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Republic of KoreaDepartment of Physics, The Islamia University Bahawalpur, Bahawalpur 63100, PakistanInsititute of Chemical Sciences, Bahauddin Zakariya University, Multan 60800, PakistanDepartment of Physics, Bahauddin Zakariya University, Multan 60800, PakistanSchool of Electronics Engineering, Chungbuk National University, Cheongju 28644, Republic of Korea; Corresponding authors.Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea; Corresponding authors.In this study, a bilayer HfO2/ZrO2 thin film structure was deposited by radio frequency sputtering at room temperature (RT) to investigate the resistive switching (RS) characteristics, mechanism as well as their reproducibility. Bilayer HfO2/ZrO2 structured device > 103 DC switching cycles at RT, and > 10 ON/OFF ratio. The RS uniformity and mechanism were evaluated by Gaussian data fitting and distributions of oxygen vacancies (VOs) in the HfO2 and ZrO2 layers through X-ray photo electron spectroscopy (XPS) analysis, respectively. Because of higher thermal conductivity (2.7Wm-1K-1) and lower Gibbs free energy (ΔGo=-1100kJ/mol) of ZrO2 layer as compared to those of HfO2 layer (1.1Wm-1K-1,ΔGo=-1010.8kJ/mol), an easier reduction and oxidation of filaments took place by exchanging oxygen ions with each other (ZrO2/HfO2). A VOs-based filamentary model has been proposed to explain RS mechanism. Furthermore, a current transport mechanism is noted be based on Schottky emission in the high field region of the high resistance states (HRS).http://www.sciencedirect.com/science/article/pii/S2211379720317423Bilayer HfO2/ZrO2 structureThermal conductivityGibbs free energyResistive switchingSchottky emission |
| spellingShingle | Muhammad Ismail Zahida Batool Khalid Mahmood Anwar Manzoor Rana Byung-Do Yang Sungjun Kim Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory Results in Physics Bilayer HfO2/ZrO2 structure Thermal conductivity Gibbs free energy Resistive switching Schottky emission |
| title | Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory |
| title_full | Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory |
| title_fullStr | Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory |
| title_full_unstemmed | Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory |
| title_short | Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory |
| title_sort | resistive switching characteristics and mechanism of bilayer hfo2 zro2 structure deposited by radio frequency sputtering for nonvolatile memory |
| topic | Bilayer HfO2/ZrO2 structure Thermal conductivity Gibbs free energy Resistive switching Schottky emission |
| url | http://www.sciencedirect.com/science/article/pii/S2211379720317423 |
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