Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory

Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory

In this study, a bilayer HfO2/ZrO2 thin film structure was deposited by radio frequency sputtering at room temperature (RT) to investigate the resistive switching (RS) characteristics, mechanism as well as their reproducibility. Bilayer HfO2/ZrO2 structured device > 103 DC switching cycles at RT,...

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Bibliographic Details
Main Authors:	Muhammad Ismail, Zahida Batool, Khalid Mahmood, Anwar Manzoor Rana, Byung-Do Yang, Sungjun Kim
Format:	Article
Language:	English
Published:	Elsevier 2020-09-01
Series:	Results in Physics
Subjects:	Bilayer HfO2/ZrO2 structure Thermal conductivity Gibbs free energy Resistive switching Schottky emission
Online Access:	http://www.sciencedirect.com/science/article/pii/S2211379720317423

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