Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1D
Copper antimony sulphide thin films are promising, less toxic, and more absorbent material in the world, and they would be good to be applied in photovoltaic energy production. To better operations of copper antimony sulphide (CuSbS2) photovoltaic cells, this paper uses a solar cell capacitance simu...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-03-01
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| Series: | Heliyon |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S240584402402927X |
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| author | Nancy Obare Wycliffe Isoe Amos Nalianya Maxwell Mageto Victor Odari |
| author_facet | Nancy Obare Wycliffe Isoe Amos Nalianya Maxwell Mageto Victor Odari |
| author_sort | Nancy Obare |
| collection | DOAJ |
| description | Copper antimony sulphide thin films are promising, less toxic, and more absorbent material in the world, and they would be good to be applied in photovoltaic energy production. To better operations of copper antimony sulphide (CuSbS2) photovoltaic cells, this paper uses a solar cell capacitance simulator (SCAPS-1D) to simulate and analyze photovoltaic properties. This article examines different thicknesses of fluorine-doped tin oxide (FTO), cadmium sulphide (CdS), carbon (C), and CuSbS2, as well as the defect and dopant concentration in the CuSbS2 photoactive layer of the photovoltaic cell structure glass/FTO/n-CdS/p-CuSbS2/C/Au. Optimum thicknesses of CuSbS2 is 300 nm, carbon hole transport layer (HTL) is 50 nm, and for n-CdS electron transport layer (ETL) is 100 nm, giving open circuit Voltage (Voc) of 0.9389 V, short circuit current density (Jsc) of 28.32 mA/cm2, fill factor (FF) of 60.8% and solar cell efficiency of 16.17%. The increase in defects causes a decrease of carrier lifetime resulting in to decrease in diffusion length and the optimum absorber layer doping concentration was found to be 1018 cm−3. |
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| format | Article |
| id | doaj.art-1033cb3c880c4de289aa172a6e475888 |
| institution | Directory Open Access Journal |
| issn | 2405-8440 |
| language | English |
| last_indexed | 2024-04-24T23:14:33Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
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| spelling | doaj.art-1033cb3c880c4de289aa172a6e4758882024-03-17T07:56:41ZengElsevierHeliyon2405-84402024-03-01105e26896Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1DNancy Obare0Wycliffe Isoe1Amos Nalianya2Maxwell Mageto3Victor Odari4Department of Physics, Masinde Muliro University of Science and Technology, P.O Box 190-50100, Kakamega, Kenya; Corresponding author.Department of Physics, Masinde Muliro University of Science and Technology, P.O Box 190-50100, Kakamega, KenyaDepartment of Physics, Masinde Muliro University of Science and Technology, P.O Box 190-50100, Kakamega, KenyaDepartment of Physics, Masinde Muliro University of Science and Technology, P.O Box 190-50100, Kakamega, Kenya; Materials Research Society of Kenya, P.O. Box 15653-00503, Nairobi, KenyaDepartment of Physics, Masinde Muliro University of Science and Technology, P.O Box 190-50100, Kakamega, Kenya; Materials Research Society of Kenya, P.O. Box 15653-00503, Nairobi, KenyaCopper antimony sulphide thin films are promising, less toxic, and more absorbent material in the world, and they would be good to be applied in photovoltaic energy production. To better operations of copper antimony sulphide (CuSbS2) photovoltaic cells, this paper uses a solar cell capacitance simulator (SCAPS-1D) to simulate and analyze photovoltaic properties. This article examines different thicknesses of fluorine-doped tin oxide (FTO), cadmium sulphide (CdS), carbon (C), and CuSbS2, as well as the defect and dopant concentration in the CuSbS2 photoactive layer of the photovoltaic cell structure glass/FTO/n-CdS/p-CuSbS2/C/Au. Optimum thicknesses of CuSbS2 is 300 nm, carbon hole transport layer (HTL) is 50 nm, and for n-CdS electron transport layer (ETL) is 100 nm, giving open circuit Voltage (Voc) of 0.9389 V, short circuit current density (Jsc) of 28.32 mA/cm2, fill factor (FF) of 60.8% and solar cell efficiency of 16.17%. The increase in defects causes a decrease of carrier lifetime resulting in to decrease in diffusion length and the optimum absorber layer doping concentration was found to be 1018 cm−3.http://www.sciencedirect.com/science/article/pii/S240584402402927XCuSbS2SCAPS-1DThin filmSimulation |
| spellingShingle | Nancy Obare Wycliffe Isoe Amos Nalianya Maxwell Mageto Victor Odari Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1D Heliyon CuSbS2 SCAPS-1D Thin film Simulation |
| title | Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1D |
| title_full | Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1D |
| title_fullStr | Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1D |
| title_full_unstemmed | Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1D |
| title_short | Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1D |
| title_sort | numerical study of copper antimony sulphide cusbs2 solar cell by scaps 1d |
| topic | CuSbS2 SCAPS-1D Thin film Simulation |
| url | http://www.sciencedirect.com/science/article/pii/S240584402402927X |
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