Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM)
Graphene shows great potential in developing the next generation of electronic devices. However, the real implementation of graphene-based electronic devices needs to be compatible with existing silicon-based nanofabrication processes. Characterizing the properties of the graphene/silicon interface...
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MDPI AG
2024-03-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/17/7/1497 |
| _version_ | 1797212340640284672 |
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| author | Dongxun Yang Jesse Henri Laarman Masayoshi Tonouchi |
| author_facet | Dongxun Yang Jesse Henri Laarman Masayoshi Tonouchi |
| author_sort | Dongxun Yang |
| collection | DOAJ |
| description | Graphene shows great potential in developing the next generation of electronic devices. However, the real implementation of graphene-based electronic devices needs to be compatible with existing silicon-based nanofabrication processes. Characterizing the properties of the graphene/silicon interface rapidly and non-invasively is crucial for this endeavor. In this study, we employ terahertz emission spectroscopy and microscopy (TES/LTEM) to evaluate large-scale chemical vapor deposition (CVD) monolayer graphene transferred onto silicon wafers, aiming to assess the dynamic electronic properties of graphene and perform large-scale graphene mapping. By comparing THz emission properties from monolayer graphene on different types of silicon substrates, including those treated with buffered oxide etches, we discern the influence of native oxide layers and surface dipoles on graphene. Finally, the mechanism of THz emission from the graphene/silicon heterojunction is discussed, and the large-scale mapping of monolayer graphene on silicon is achieved successfully. These results demonstrate the efficacy of TES/LTEM for graphene characterization in the modern graphene-based semiconductor industry. |
| first_indexed | 2024-04-24T10:40:50Z |
| format | Article |
| id | doaj.art-103f1420e2ef47c181913ee23a454978 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-04-24T10:40:50Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-103f1420e2ef47c181913ee23a4549782024-04-12T13:21:49ZengMDPI AGMaterials1996-19442024-03-01177149710.3390/ma17071497Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM)Dongxun Yang0Jesse Henri Laarman1Masayoshi Tonouchi2Institute of Laser Engineering, Osaka University, Osaka 565-0871, JapanDepartment of Applied Physics, Eindhoven University of Technology, 5612 AZ Eindhoven, The NetherlandsInstitute of Laser Engineering, Osaka University, Osaka 565-0871, JapanGraphene shows great potential in developing the next generation of electronic devices. However, the real implementation of graphene-based electronic devices needs to be compatible with existing silicon-based nanofabrication processes. Characterizing the properties of the graphene/silicon interface rapidly and non-invasively is crucial for this endeavor. In this study, we employ terahertz emission spectroscopy and microscopy (TES/LTEM) to evaluate large-scale chemical vapor deposition (CVD) monolayer graphene transferred onto silicon wafers, aiming to assess the dynamic electronic properties of graphene and perform large-scale graphene mapping. By comparing THz emission properties from monolayer graphene on different types of silicon substrates, including those treated with buffered oxide etches, we discern the influence of native oxide layers and surface dipoles on graphene. Finally, the mechanism of THz emission from the graphene/silicon heterojunction is discussed, and the large-scale mapping of monolayer graphene on silicon is achieved successfully. These results demonstrate the efficacy of TES/LTEM for graphene characterization in the modern graphene-based semiconductor industry.https://www.mdpi.com/1996-1944/17/7/1497grapheneterahertz emission spectroscopy (TES)BHF etchingsilicon |
| spellingShingle | Dongxun Yang Jesse Henri Laarman Masayoshi Tonouchi Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM) Materials graphene terahertz emission spectroscopy (TES) BHF etching silicon |
| title | Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM) |
| title_full | Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM) |
| title_fullStr | Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM) |
| title_full_unstemmed | Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM) |
| title_short | Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM) |
| title_sort | sensitive characterization of the graphene transferred onto varied si wafer surfaces via terahertz emission spectroscopy and microscopy tes ltem |
| topic | graphene terahertz emission spectroscopy (TES) BHF etching silicon |
| url | https://www.mdpi.com/1996-1944/17/7/1497 |
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