Effects of CF<sub>4</sub> Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors
Electrolyte–insulator–semiconductor (EIS) sensors, used in applications such as pH sensing and sodium ion sensing, are the most basic type of ion-sensitive field-effect transistor (ISFET) membranes. Currently, some of the most popular techniques for synthesizing such sensors are chemical vapor depos...
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MDPI AG
2020-09-01
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| author | Chyuan-Haur Kao Yen-Lin Su Wei-Jen Liao Ming-Hsien Li Wei-Lun Chan Shang-Che Tsai Hsiang Chen |
| author_facet | Chyuan-Haur Kao Yen-Lin Su Wei-Jen Liao Ming-Hsien Li Wei-Lun Chan Shang-Che Tsai Hsiang Chen |
| author_sort | Chyuan-Haur Kao |
| collection | DOAJ |
| description | Electrolyte–insulator–semiconductor (EIS) sensors, used in applications such as pH sensing and sodium ion sensing, are the most basic type of ion-sensitive field-effect transistor (ISFET) membranes. Currently, some of the most popular techniques for synthesizing such sensors are chemical vapor deposition, reactive sputtering and sol-gel deposition. However, there are certain limitations on such techniques, such as reliability concerns and isolation problems. In this research, a novel design of an EIS membrane consisting of an optical material of indium gallium oxide (IGO) was demonstrated. Compared with conventional treatment such as annealing, Ti doping and CF<sub>4</sub> plasma treatment were incorporated in the fabrication of the film. Because of the effective treatment of doping and plasma treatment, the defects were mitigated and the membrane capacitance was boosted. Therefore, the pH sensitivity can be increased up to 60.8 mV/pH. In addition, the hysteresis voltage can be improved down to 2.1 mV, and the drift voltage can be suppressed to as low as 0.23 mV/h. IGO-based membranes are promising for future high-sensitivity and -stability devices integrated with optical applications. |
| first_indexed | 2024-03-10T16:20:14Z |
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| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T16:20:14Z |
| publishDate | 2020-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-10604394ca9248688e7acbd29dc2f98f2023-11-20T13:40:43ZengMDPI AGCrystals2073-43522020-09-0110981010.3390/cryst10090810Effects of CF<sub>4</sub> Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–SemiconductorsChyuan-Haur Kao0Yen-Lin Su1Wei-Jen Liao2Ming-Hsien Li3Wei-Lun Chan4Shang-Che Tsai5Hsiang Chen6Department of Electronics Engineering, Chang Gung University, Tao Yuan 333, TaiwanDepartment of Electronics Engineering, Chang Gung University, Tao Yuan 333, TaiwanDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, TaiwanDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, TaiwanDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, TaiwanDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, TaiwanDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, TaiwanElectrolyte–insulator–semiconductor (EIS) sensors, used in applications such as pH sensing and sodium ion sensing, are the most basic type of ion-sensitive field-effect transistor (ISFET) membranes. Currently, some of the most popular techniques for synthesizing such sensors are chemical vapor deposition, reactive sputtering and sol-gel deposition. However, there are certain limitations on such techniques, such as reliability concerns and isolation problems. In this research, a novel design of an EIS membrane consisting of an optical material of indium gallium oxide (IGO) was demonstrated. Compared with conventional treatment such as annealing, Ti doping and CF<sub>4</sub> plasma treatment were incorporated in the fabrication of the film. Because of the effective treatment of doping and plasma treatment, the defects were mitigated and the membrane capacitance was boosted. Therefore, the pH sensitivity can be increased up to 60.8 mV/pH. In addition, the hysteresis voltage can be improved down to 2.1 mV, and the drift voltage can be suppressed to as low as 0.23 mV/h. IGO-based membranes are promising for future high-sensitivity and -stability devices integrated with optical applications.https://www.mdpi.com/2073-4352/10/9/810IGOTi dopingmembranesCF<sub>4</sub> plasma treatmentpH sensing biosensors |
| spellingShingle | Chyuan-Haur Kao Yen-Lin Su Wei-Jen Liao Ming-Hsien Li Wei-Lun Chan Shang-Che Tsai Hsiang Chen Effects of CF<sub>4</sub> Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors Crystals IGO Ti doping membranes CF<sub>4</sub> plasma treatment pH sensing biosensors |
| title | Effects of CF<sub>4</sub> Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors |
| title_full | Effects of CF<sub>4</sub> Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors |
| title_fullStr | Effects of CF<sub>4</sub> Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors |
| title_full_unstemmed | Effects of CF<sub>4</sub> Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors |
| title_short | Effects of CF<sub>4</sub> Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors |
| title_sort | effects of cf sub 4 sub plasma treatment on indium gallium oxide and ti doped indium gallium oxide sensing membranes in electrolyte insulator semiconductors |
| topic | IGO Ti doping membranes CF<sub>4</sub> plasma treatment pH sensing biosensors |
| url | https://www.mdpi.com/2073-4352/10/9/810 |
| work_keys_str_mv | AT chyuanhaurkao effectsofcfsub4subplasmatreatmentonindiumgalliumoxideandtidopedindiumgalliumoxidesensingmembranesinelectrolyteinsulatorsemiconductors AT yenlinsu effectsofcfsub4subplasmatreatmentonindiumgalliumoxideandtidopedindiumgalliumoxidesensingmembranesinelectrolyteinsulatorsemiconductors AT weijenliao effectsofcfsub4subplasmatreatmentonindiumgalliumoxideandtidopedindiumgalliumoxidesensingmembranesinelectrolyteinsulatorsemiconductors AT minghsienli effectsofcfsub4subplasmatreatmentonindiumgalliumoxideandtidopedindiumgalliumoxidesensingmembranesinelectrolyteinsulatorsemiconductors AT weilunchan effectsofcfsub4subplasmatreatmentonindiumgalliumoxideandtidopedindiumgalliumoxidesensingmembranesinelectrolyteinsulatorsemiconductors AT shangchetsai effectsofcfsub4subplasmatreatmentonindiumgalliumoxideandtidopedindiumgalliumoxidesensingmembranesinelectrolyteinsulatorsemiconductors AT hsiangchen effectsofcfsub4subplasmatreatmentonindiumgalliumoxideandtidopedindiumgalliumoxidesensingmembranesinelectrolyteinsulatorsemiconductors |