Composition dependent structural phase transition and optical band gap tuning in InSe thin films
Bulk alloys of InxSe100-x (x = 5, 10, 20, 30, 40 and 50) are prepared using melt quenching technique. Thin films having thickness ~750 nm of these prepared bulk alloys are fabricated using thermal evaporation technique on glass substrate. The as-deposited InxSe100-x thin films with x ≤ 40 are amorph...
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| Format: | Article |
| Language: | English |
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Elsevier
2019-11-01
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| Series: | Heliyon |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844019365922 |
| _version_ | 1818778491042136064 |
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| author | Harpreet Singh Palwinder Singh Randhir Singh Jeewan Sharma A.P. Singh Akshay Kumar Anup Thakur |
| author_facet | Harpreet Singh Palwinder Singh Randhir Singh Jeewan Sharma A.P. Singh Akshay Kumar Anup Thakur |
| author_sort | Harpreet Singh |
| collection | DOAJ |
| description | Bulk alloys of InxSe100-x (x = 5, 10, 20, 30, 40 and 50) are prepared using melt quenching technique. Thin films having thickness ~750 nm of these prepared bulk alloys are fabricated using thermal evaporation technique on glass substrate. The as-deposited InxSe100-x thin films with x ≤ 40 are amorphous and In50Se50 thin film is crystalline in nature verified from X-ray diffraction (XRD). The change in morphology of deposited thin films with indium content also verifies structural phase transition and found that the phase transition started with x = 40 which is not detected in XRD pattern. The drastic change in transmission is found with 50% indium content. In50Se50 thin film has less than 30% transmission whereas other films are highly transparent. Optical band gap is calculated using Tauc's plot and decrease in optical band gap is observed with indium content. The variation of optical band gap from 1.88 eV to 1.12 eV is achieved with indium content of 5%–50%. The structural transition and change in optical band gap depict that InSe thin films are potential candidates in various technological applications. |
| first_indexed | 2024-12-18T11:45:34Z |
| format | Article |
| id | doaj.art-107788a9f29b4f36b4201f8ac4640c86 |
| institution | Directory Open Access Journal |
| issn | 2405-8440 |
| language | English |
| last_indexed | 2024-12-18T11:45:34Z |
| publishDate | 2019-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Heliyon |
| spelling | doaj.art-107788a9f29b4f36b4201f8ac4640c862022-12-21T21:09:18ZengElsevierHeliyon2405-84402019-11-01511e02933Composition dependent structural phase transition and optical band gap tuning in InSe thin filmsHarpreet Singh0Palwinder Singh1Randhir Singh2Jeewan Sharma3A.P. Singh4Akshay Kumar5Anup Thakur6Department of Physics, Punjabi University, Patiala, 147 002, Punjab, India; Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala, 147 002, Punjab, IndiaDepartment of Physics, Punjabi University, Patiala, 147 002, Punjab, India; Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala, 147 002, Punjab, IndiaDepartment of Nanotechnology, Sri Guru Granth Sahib World University, Fatehgarh Sahib, Punjab, 140 407, IndiaDepartment of Nanotechnology, Sri Guru Granth Sahib World University, Fatehgarh Sahib, Punjab, 140 407, IndiaDepartment of Physics, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, Punjab, 144 011, IndiaDepartment of Nanotechnology, Sri Guru Granth Sahib World University, Fatehgarh Sahib, Punjab, 140 407, IndiaAdvanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala, 147 002, Punjab, India; Corresponding author.Bulk alloys of InxSe100-x (x = 5, 10, 20, 30, 40 and 50) are prepared using melt quenching technique. Thin films having thickness ~750 nm of these prepared bulk alloys are fabricated using thermal evaporation technique on glass substrate. The as-deposited InxSe100-x thin films with x ≤ 40 are amorphous and In50Se50 thin film is crystalline in nature verified from X-ray diffraction (XRD). The change in morphology of deposited thin films with indium content also verifies structural phase transition and found that the phase transition started with x = 40 which is not detected in XRD pattern. The drastic change in transmission is found with 50% indium content. In50Se50 thin film has less than 30% transmission whereas other films are highly transparent. Optical band gap is calculated using Tauc's plot and decrease in optical band gap is observed with indium content. The variation of optical band gap from 1.88 eV to 1.12 eV is achieved with indium content of 5%–50%. The structural transition and change in optical band gap depict that InSe thin films are potential candidates in various technological applications.http://www.sciencedirect.com/science/article/pii/S2405844019365922Materials chemistryPhysical parametersChalcogenideOptical band gapDensity of statesPhase transition |
| spellingShingle | Harpreet Singh Palwinder Singh Randhir Singh Jeewan Sharma A.P. Singh Akshay Kumar Anup Thakur Composition dependent structural phase transition and optical band gap tuning in InSe thin films Heliyon Materials chemistry Physical parameters Chalcogenide Optical band gap Density of states Phase transition |
| title | Composition dependent structural phase transition and optical band gap tuning in InSe thin films |
| title_full | Composition dependent structural phase transition and optical band gap tuning in InSe thin films |
| title_fullStr | Composition dependent structural phase transition and optical band gap tuning in InSe thin films |
| title_full_unstemmed | Composition dependent structural phase transition and optical band gap tuning in InSe thin films |
| title_short | Composition dependent structural phase transition and optical band gap tuning in InSe thin films |
| title_sort | composition dependent structural phase transition and optical band gap tuning in inse thin films |
| topic | Materials chemistry Physical parameters Chalcogenide Optical band gap Density of states Phase transition |
| url | http://www.sciencedirect.com/science/article/pii/S2405844019365922 |
| work_keys_str_mv | AT harpreetsingh compositiondependentstructuralphasetransitionandopticalbandgaptuningininsethinfilms AT palwindersingh compositiondependentstructuralphasetransitionandopticalbandgaptuningininsethinfilms AT randhirsingh compositiondependentstructuralphasetransitionandopticalbandgaptuningininsethinfilms AT jeewansharma compositiondependentstructuralphasetransitionandopticalbandgaptuningininsethinfilms AT apsingh compositiondependentstructuralphasetransitionandopticalbandgaptuningininsethinfilms AT akshaykumar compositiondependentstructuralphasetransitionandopticalbandgaptuningininsethinfilms AT anupthakur compositiondependentstructuralphasetransitionandopticalbandgaptuningininsethinfilms |