High-Responsivity Photovoltaic Photodetectors Based on MoTe<sub>2</sub>/MoSe<sub>2</sub> van der Waals Heterojunctions
Van der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic p...
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MDPI AG
2019-06-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/9/6/315 |
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| author | Hao Luo Bolun Wang Enze Wang Xuewen Wang Yufei Sun Kai Liu |
| author_facet | Hao Luo Bolun Wang Enze Wang Xuewen Wang Yufei Sun Kai Liu |
| author_sort | Hao Luo |
| collection | DOAJ |
| description | Van der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic photodetector based on a MoTe<sub>2</sub>/MoSe<sub>2</sub> type-II heterojunction. Due to the interlayer built-in potential, the MoTe<sub>2</sub>/MoSe<sub>2</sub> heterojunction shows obvious photovoltaic behavior and its photoresponse can be tuned by the gate voltage due to the ultrathin thickness of the heterojunction. This self-powered photovoltaic photodetector exhibits an excellent responsivity of 1.5 A W<sup>−1</sup>, larger than previously reported TMDs-based photovoltaic photodetectors. Due to the high-efficiency separation of electron-hole pairs and ultrafast charge transfer, the light-induced on/off ratio of current switching is larger than 10<sup>4</sup> at zero bias, and the dark current is extremely low (~10<sup>−13</sup> A). These MoTe<sub>2</sub>/MoSe<sub>2</sub> type-II heterojunctions are expected to provide more opportunities for future nanoscale optoelectronic devices. |
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| id | doaj.art-10a1c6ecb459484f81781745bd17d66b |
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| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-14T00:26:09Z |
| publishDate | 2019-06-01 |
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| spelling | doaj.art-10a1c6ecb459484f81781745bd17d66b2022-12-22T02:22:44ZengMDPI AGCrystals2073-43522019-06-019631510.3390/cryst9060315cryst9060315High-Responsivity Photovoltaic Photodetectors Based on MoTe<sub>2</sub>/MoSe<sub>2</sub> van der Waals HeterojunctionsHao Luo0Bolun Wang1Enze Wang2Xuewen Wang3Yufei Sun4Kai Liu5State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaState Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaState Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaState Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaState Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaState Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaVan der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic photodetector based on a MoTe<sub>2</sub>/MoSe<sub>2</sub> type-II heterojunction. Due to the interlayer built-in potential, the MoTe<sub>2</sub>/MoSe<sub>2</sub> heterojunction shows obvious photovoltaic behavior and its photoresponse can be tuned by the gate voltage due to the ultrathin thickness of the heterojunction. This self-powered photovoltaic photodetector exhibits an excellent responsivity of 1.5 A W<sup>−1</sup>, larger than previously reported TMDs-based photovoltaic photodetectors. Due to the high-efficiency separation of electron-hole pairs and ultrafast charge transfer, the light-induced on/off ratio of current switching is larger than 10<sup>4</sup> at zero bias, and the dark current is extremely low (~10<sup>−13</sup> A). These MoTe<sub>2</sub>/MoSe<sub>2</sub> type-II heterojunctions are expected to provide more opportunities for future nanoscale optoelectronic devices.https://www.mdpi.com/2073-4352/9/6/315MoTe<sub>2</sub>MoSe<sub>2</sub>van der Waals heterojunctionphotovoltaic photodetectorresponsivitydetectivity |
| spellingShingle | Hao Luo Bolun Wang Enze Wang Xuewen Wang Yufei Sun Kai Liu High-Responsivity Photovoltaic Photodetectors Based on MoTe<sub>2</sub>/MoSe<sub>2</sub> van der Waals Heterojunctions Crystals MoTe<sub>2</sub> MoSe<sub>2</sub> van der Waals heterojunction photovoltaic photodetector responsivity detectivity |
| title | High-Responsivity Photovoltaic Photodetectors Based on MoTe<sub>2</sub>/MoSe<sub>2</sub> van der Waals Heterojunctions |
| title_full | High-Responsivity Photovoltaic Photodetectors Based on MoTe<sub>2</sub>/MoSe<sub>2</sub> van der Waals Heterojunctions |
| title_fullStr | High-Responsivity Photovoltaic Photodetectors Based on MoTe<sub>2</sub>/MoSe<sub>2</sub> van der Waals Heterojunctions |
| title_full_unstemmed | High-Responsivity Photovoltaic Photodetectors Based on MoTe<sub>2</sub>/MoSe<sub>2</sub> van der Waals Heterojunctions |
| title_short | High-Responsivity Photovoltaic Photodetectors Based on MoTe<sub>2</sub>/MoSe<sub>2</sub> van der Waals Heterojunctions |
| title_sort | high responsivity photovoltaic photodetectors based on mote sub 2 sub mose sub 2 sub van der waals heterojunctions |
| topic | MoTe<sub>2</sub> MoSe<sub>2</sub> van der Waals heterojunction photovoltaic photodetector responsivity detectivity |
| url | https://www.mdpi.com/2073-4352/9/6/315 |
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