Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been investigated for decades, but its origin still remains controversial. In this study, ten u-GaN samples grown via metalorganic chemical vapor deposition (MOCVD) are investigated. It is observed from the roo...

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Bibliographic Details
Main Authors: Feng Liang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Shuangtao Liu, Yao Xing, Liqun Zhang, Mo Li, Yuantao Zhang, Guotong Du
Format: Article
Language:English
Published: MDPI AG 2018-09-01
Series:Nanomaterials
Subjects:
unintentionally doped GaN
yellow luminescence band
carbon impurity
Online Access:http://www.mdpi.com/2079-4991/8/9/744

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