Frequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic Gating
In this article, we report on a comprehensive modeling study of frequency tuning of graphene resonant nanoelectromechanical systems (NEMS) via electrostatic coupling forces induced by controlling the voltage of a capacitive gate. The model applies to both doubly clamped graphene membranes and circum...
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| Format: | Article |
| Language: | English |
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MDPI AG
2018-06-01
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| Series: | Micromachines |
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| Online Access: | http://www.mdpi.com/2072-666X/9/6/312 |
| _version_ | 1818957456958554112 |
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| author | Tengda Mei Jaesung Lee Yuehang Xu Philip X.-L. Feng |
| author_facet | Tengda Mei Jaesung Lee Yuehang Xu Philip X.-L. Feng |
| author_sort | Tengda Mei |
| collection | DOAJ |
| description | In this article, we report on a comprehensive modeling study of frequency tuning of graphene resonant nanoelectromechanical systems (NEMS) via electrostatic coupling forces induced by controlling the voltage of a capacitive gate. The model applies to both doubly clamped graphene membranes and circumference-clamped circular drumhead device structures. Frequency tuning of these devices can be predicted by considering both capacitive softening and elastic stiffening. It is shown that the built-in strain in the device strongly dictates the frequency tuning behavior and tuning range. We also find that doubly clamped graphene resonators can have a wider frequency tuning range, while circular drumhead devices have higher initial resonance frequency with same device characteristic parameters. Further, the parametric study in this work clearly shows that a smaller built-in strain, smaller depth of air gap or cavity, and larger device size or characteristic length (e.g., length for doubly clamped devices, and diameter for circular drumheads) help achieve a wider range of electrostatic frequency tunability. This study builds a solid foundation that can offer important device fabrication and design guidelines for achieving radio frequency components (e.g., voltage controlled oscillators and filters) with the desired frequencies and tuning ranges. |
| first_indexed | 2024-12-20T11:10:09Z |
| format | Article |
| id | doaj.art-10faaf13e1584747b49dfed3593317fb |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-20T11:10:09Z |
| publishDate | 2018-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-10faaf13e1584747b49dfed3593317fb2022-12-21T19:42:47ZengMDPI AGMicromachines2072-666X2018-06-019631210.3390/mi9060312mi9060312Frequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic GatingTengda Mei0Jaesung Lee1Yuehang Xu2Philip X.-L. Feng3School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, ChinaElectrical Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USASchool of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, ChinaElectrical Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USAIn this article, we report on a comprehensive modeling study of frequency tuning of graphene resonant nanoelectromechanical systems (NEMS) via electrostatic coupling forces induced by controlling the voltage of a capacitive gate. The model applies to both doubly clamped graphene membranes and circumference-clamped circular drumhead device structures. Frequency tuning of these devices can be predicted by considering both capacitive softening and elastic stiffening. It is shown that the built-in strain in the device strongly dictates the frequency tuning behavior and tuning range. We also find that doubly clamped graphene resonators can have a wider frequency tuning range, while circular drumhead devices have higher initial resonance frequency with same device characteristic parameters. Further, the parametric study in this work clearly shows that a smaller built-in strain, smaller depth of air gap or cavity, and larger device size or characteristic length (e.g., length for doubly clamped devices, and diameter for circular drumheads) help achieve a wider range of electrostatic frequency tunability. This study builds a solid foundation that can offer important device fabrication and design guidelines for achieving radio frequency components (e.g., voltage controlled oscillators and filters) with the desired frequencies and tuning ranges.http://www.mdpi.com/2072-666X/9/6/312nanoelectromechanical systems (NEMS)graphene resonatorselectrostatic gate tuningfrequency tuning model |
| spellingShingle | Tengda Mei Jaesung Lee Yuehang Xu Philip X.-L. Feng Frequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic Gating Micromachines nanoelectromechanical systems (NEMS) graphene resonators electrostatic gate tuning frequency tuning model |
| title | Frequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic Gating |
| title_full | Frequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic Gating |
| title_fullStr | Frequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic Gating |
| title_full_unstemmed | Frequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic Gating |
| title_short | Frequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic Gating |
| title_sort | frequency tuning of graphene nanoelectromechanical resonators via electrostatic gating |
| topic | nanoelectromechanical systems (NEMS) graphene resonators electrostatic gate tuning frequency tuning model |
| url | http://www.mdpi.com/2072-666X/9/6/312 |
| work_keys_str_mv | AT tengdamei frequencytuningofgraphenenanoelectromechanicalresonatorsviaelectrostaticgating AT jaesunglee frequencytuningofgraphenenanoelectromechanicalresonatorsviaelectrostaticgating AT yuehangxu frequencytuningofgraphenenanoelectromechanicalresonatorsviaelectrostaticgating AT philipxlfeng frequencytuningofgraphenenanoelectromechanicalresonatorsviaelectrostaticgating |