An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS
The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition. Then, a fitting dependence of the critical electric field on the doping concentration for...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8854806/ |
| Summary: | The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition. Then, a fitting dependence of the critical electric field on the doping concentration for the device is obtained, based on which, the model of breakdown voltage is given for the DT-SJ SiC VDMOS. Analytical results are compared with simulative results with the same thicknesses of drift region from 8 μm to 16 μm and the doping concentrations from 4 × 10<sup>16</sup> cm<sup>-3</sup> to 8 × 10<sup>16</sup> cm<sup>-3</sup>. It is numerically demonstrated that the errors between model and simulation are less than 3% when N pillar and P pillar have the same width of 1μm. |
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| ISSN: | 2169-3536 |