An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS
The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition. Then, a fitting dependence of the critical electric field on the doping concentration for...
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/8854806/ |
| _version_ | 1818407663210332160 |
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| author | Tao Liu Shengdong Hu Jian'an Wang Gang Guo Jun Luo Yuan Wang Jingwei Guo Yanmeng Huo |
| author_facet | Tao Liu Shengdong Hu Jian'an Wang Gang Guo Jun Luo Yuan Wang Jingwei Guo Yanmeng Huo |
| author_sort | Tao Liu |
| collection | DOAJ |
| description | The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition. Then, a fitting dependence of the critical electric field on the doping concentration for the device is obtained, based on which, the model of breakdown voltage is given for the DT-SJ SiC VDMOS. Analytical results are compared with simulative results with the same thicknesses of drift region from 8 μm to 16 μm and the doping concentrations from 4 × 10<sup>16</sup> cm<sup>-3</sup> to 8 × 10<sup>16</sup> cm<sup>-3</sup>. It is numerically demonstrated that the errors between model and simulation are less than 3% when N pillar and P pillar have the same width of 1μm. |
| first_indexed | 2024-12-14T09:31:25Z |
| format | Article |
| id | doaj.art-1129d8d018284f5cbb708ff3fb6ddd36 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-14T09:31:25Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-1129d8d018284f5cbb708ff3fb6ddd362022-12-21T23:08:04ZengIEEEIEEE Access2169-35362019-01-01714511814512310.1109/ACCESS.2019.29449918854806An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOSTao Liu0Shengdong Hu1https://orcid.org/0000-0002-5838-4444Jian'an Wang2Gang Guo3Jun Luo4Yuan Wang5Jingwei Guo6Yanmeng Huo7Chongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing, ChinaChongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing, ChinaThe National Laboratory of Analogue Integrated Circuits, No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing, ChinaChina Institute of Atomic Energy, Beijing, ChinaThe National Laboratory of Analogue Integrated Circuits, No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing, ChinaChongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing, ChinaChongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing, ChinaChongqing Engineering Laboratory of High Performance Integrated Circuits, College of Communication Engineering, Chongqing University, Chongqing, ChinaThe theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition. Then, a fitting dependence of the critical electric field on the doping concentration for the device is obtained, based on which, the model of breakdown voltage is given for the DT-SJ SiC VDMOS. Analytical results are compared with simulative results with the same thicknesses of drift region from 8 μm to 16 μm and the doping concentrations from 4 × 10<sup>16</sup> cm<sup>-3</sup> to 8 × 10<sup>16</sup> cm<sup>-3</sup>. It is numerically demonstrated that the errors between model and simulation are less than 3% when N pillar and P pillar have the same width of 1μm.https://ieeexplore.ieee.org/document/8854806/Silicon carbideelectric fieldbreakdown voltagemodel |
| spellingShingle | Tao Liu Shengdong Hu Jian'an Wang Gang Guo Jun Luo Yuan Wang Jingwei Guo Yanmeng Huo An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS IEEE Access Silicon carbide electric field breakdown voltage model |
| title | An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS |
| title_full | An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS |
| title_fullStr | An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS |
| title_full_unstemmed | An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS |
| title_short | An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS |
| title_sort | investigation of electric field and breakdown voltage models for a deep trench superjunction sic vdmos |
| topic | Silicon carbide electric field breakdown voltage model |
| url | https://ieeexplore.ieee.org/document/8854806/ |
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