An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS

An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS

The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition. Then, a fitting dependence of the critical electric field on the doping concentration for...

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Bibliographic Details
Main Authors: Tao Liu, Shengdong Hu, Jian'an Wang, Gang Guo, Jun Luo, Yuan Wang, Jingwei Guo, Yanmeng Huo
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
Silicon carbide
electric field
breakdown voltage
model
Online Access:https://ieeexplore.ieee.org/document/8854806/

Internet

https://ieeexplore.ieee.org/document/8854806/

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