Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet...

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Bibliographic Details
Main Authors: Sekhar Reddy Kola, Yiming Li
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Open Journal of Nanotechnology
Subjects:
Complementary field-effect transistors
gate-all-around
nanosheet
vertically stacked
process variation effect
characteristic fluctuation
Online Access:https://ieeexplore.ieee.org/document/10330087/

Internet

https://ieeexplore.ieee.org/document/10330087/

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