Theoretical study of a high-efficiency GaP–Si heterojunction betavoltaic cell compared with metal–Si Schottky barrier betavoltaic cell

In this work, energy converters, which contain a GaP–Si heterojunction and Si-based Schottky barrier diodes with Al, Ti, Ag, and W, are used to convert 2 μm-thick 63Ni radioactive source energy into electrical energy. First, energy deposition distributions of the 63Ni radioactive source in these con...

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Detalles Bibliográficos
Main Authors: Yu Wang, Jingbin Lu, Renzhou Zheng, Xiaoyi Li, Yumin Liu, Xue Zhang, Yuehui Zhang, Ziyi Chen
Formato: Artigo
Idioma:English
Publicado: AIP Publishing LLC 2021-06-01
Series:AIP Advances
Acceso en liña:http://dx.doi.org/10.1063/5.0053917