Fabrication of Pyramid Structure Substrate Utilized for Epitaxial Growth Free-Standing GaN
Metal−organic chemical vapor deposition (MOCVD)-grown GaN on sapphire substrate was etched by hot phosphoric acids. Pyramid structures were obtained in the N-polar face of the MOCVD−GaN. Details of the formation process and morphology of the structures were discussed. The crystal...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-10-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/9/11/547 |