Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems
This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the tech...
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| Format: | Article |
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MDPI AG
2021-03-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/11/5/2393 |
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| author | Chhandak Mukherjee Marina Deng Virginie Nodjiadjim Muriel Riet Colin Mismer Djeber Guendouz Christophe Caillaud Hervé Bertin Nicolas Vaissiere Mathieu Luisier Xin Wen Magali De Matos Patrick Mounaix Cristell Maneux |
| author_facet | Chhandak Mukherjee Marina Deng Virginie Nodjiadjim Muriel Riet Colin Mismer Djeber Guendouz Christophe Caillaud Hervé Bertin Nicolas Vaissiere Mathieu Luisier Xin Wen Magali De Matos Patrick Mounaix Cristell Maneux |
| author_sort | Chhandak Mukherjee |
| collection | DOAJ |
| description | This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the technology power loss management, we propose a single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics for the design of optoelectronic integrated circuits (OEICs) monolithically integrated on a single Indium-Phosphide (InP) die. Through the implementation of accurate and SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible compact models of uni-traveling carrier photodiodes (UTC-PDs) and InP double heterojunction bipolar transistors (DHBTs), we demonstrated that the next generation of THz technologies for beyond-5G networks requires (i) a multi-physical understanding of their operation described through electrical, photonic and thermal equations, (ii) dedicated test structures for characterization in the frequency range higher than 110 GHz, (iii) a dedicated parameter extraction procedure, along with (iv) a circuit reliability assessment methodology. Developed on the research and development activities achieved in the past two decades, we detailed each part of the multiphysics design optimization approach while ensuring technology power loss management through a holistic procedure compatible with existing software tools and design flow for the timely and cost-effective achievement of THz OEICs. |
| first_indexed | 2024-03-09T05:00:44Z |
| format | Article |
| id | doaj.art-11c31f499e9f4854a76200d1a600bacf |
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| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T05:00:44Z |
| publishDate | 2021-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-11c31f499e9f4854a76200d1a600bacf2023-12-03T12:59:43ZengMDPI AGApplied Sciences2076-34172021-03-01115239310.3390/app11052393Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication SystemsChhandak Mukherjee0Marina Deng1Virginie Nodjiadjim2Muriel Riet3Colin Mismer4Djeber Guendouz5Christophe Caillaud6Hervé Bertin7Nicolas Vaissiere8Mathieu Luisier9Xin Wen10Magali De Matos11Patrick Mounaix12Cristell Maneux13IMS Laboratory, University of Bordeaux, CNRS UMR 5218, 33405 Talence, FranceIMS Laboratory, University of Bordeaux, CNRS UMR 5218, 33405 Talence, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceIMS Laboratory, University of Bordeaux, CNRS UMR 5218, 33405 Talence, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceIII-V Lab, A Joint Lab between Nokia Bell Labs, Thales Research&Technology and CEA-LETI, 91767 Palaiseau, FranceEidgenössische Technische Hochschule, ETH Zürich, Rämistrasse 101, 8092 Zürich, SwitzerlandEidgenössische Technische Hochschule, ETH Zürich, Rämistrasse 101, 8092 Zürich, SwitzerlandIMS Laboratory, University of Bordeaux, CNRS UMR 5218, 33405 Talence, FranceIMS Laboratory, University of Bordeaux, CNRS UMR 5218, 33405 Talence, FranceIMS Laboratory, University of Bordeaux, CNRS UMR 5218, 33405 Talence, FranceThis review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the technology power loss management, we propose a single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics for the design of optoelectronic integrated circuits (OEICs) monolithically integrated on a single Indium-Phosphide (InP) die. Through the implementation of accurate and SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible compact models of uni-traveling carrier photodiodes (UTC-PDs) and InP double heterojunction bipolar transistors (DHBTs), we demonstrated that the next generation of THz technologies for beyond-5G networks requires (i) a multi-physical understanding of their operation described through electrical, photonic and thermal equations, (ii) dedicated test structures for characterization in the frequency range higher than 110 GHz, (iii) a dedicated parameter extraction procedure, along with (iv) a circuit reliability assessment methodology. Developed on the research and development activities achieved in the past two decades, we detailed each part of the multiphysics design optimization approach while ensuring technology power loss management through a holistic procedure compatible with existing software tools and design flow for the timely and cost-effective achievement of THz OEICs.https://www.mdpi.com/2076-3417/11/5/2393electrical characterizationcompact modelheterojunction bipolar transistoruni-traveling carrier photodiodeshigh frequencyindium-phosphide |
| spellingShingle | Chhandak Mukherjee Marina Deng Virginie Nodjiadjim Muriel Riet Colin Mismer Djeber Guendouz Christophe Caillaud Hervé Bertin Nicolas Vaissiere Mathieu Luisier Xin Wen Magali De Matos Patrick Mounaix Cristell Maneux Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems Applied Sciences electrical characterization compact model heterojunction bipolar transistor uni-traveling carrier photodiodes high frequency indium-phosphide |
| title | Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems |
| title_full | Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems |
| title_fullStr | Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems |
| title_full_unstemmed | Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems |
| title_short | Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems |
| title_sort | towards monolithic indium phosphide inp based electronic photonic technologies for beyond 5g communication systems |
| topic | electrical characterization compact model heterojunction bipolar transistor uni-traveling carrier photodiodes high frequency indium-phosphide |
| url | https://www.mdpi.com/2076-3417/11/5/2393 |
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