Criterion for Selective Area Growth of III-V Nanowires
A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/20/3698 |
| _version_ | 1827648503622402048 |
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| author | Vladimir G. Dubrovskii |
| author_facet | Vladimir G. Dubrovskii |
| author_sort | Vladimir G. Dubrovskii |
| collection | DOAJ |
| description | A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets on the mask, is established, taking into account the minimum chemical potential of the III-V pairs required for nucleation on different surfaces, and the surface diffusion of the group III adatoms. The SAG maps are plotted in terms of the material fluxes versus the temperature. The non-trivial behavior of the SAG window, with the opening size and pitch, is analyzed, depending on the direction of the diffusion flux of the group III adatoms into or from the openings. A good correlation of the model with the data on the SAG of vertical GaN NWs and planar GaAs and InAs NWs by molecular beam epitaxy (MBE) is demonstrated. |
| first_indexed | 2024-03-09T19:39:08Z |
| format | Article |
| id | doaj.art-11cd34ba67794f8f87b2e37092e9ca33 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T19:39:08Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-11cd34ba67794f8f87b2e37092e9ca332023-11-24T01:42:07ZengMDPI AGNanomaterials2079-49912022-10-011220369810.3390/nano12203698Criterion for Selective Area Growth of III-V NanowiresVladimir G. Dubrovskii0Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, RussiaA model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets on the mask, is established, taking into account the minimum chemical potential of the III-V pairs required for nucleation on different surfaces, and the surface diffusion of the group III adatoms. The SAG maps are plotted in terms of the material fluxes versus the temperature. The non-trivial behavior of the SAG window, with the opening size and pitch, is analyzed, depending on the direction of the diffusion flux of the group III adatoms into or from the openings. A good correlation of the model with the data on the SAG of vertical GaN NWs and planar GaAs and InAs NWs by molecular beam epitaxy (MBE) is demonstrated.https://www.mdpi.com/2079-4991/12/20/3698selective area growthpatterned substratesopeningsgroup III adatomssurface diffusion |
| spellingShingle | Vladimir G. Dubrovskii Criterion for Selective Area Growth of III-V Nanowires Nanomaterials selective area growth patterned substrates openings group III adatoms surface diffusion |
| title | Criterion for Selective Area Growth of III-V Nanowires |
| title_full | Criterion for Selective Area Growth of III-V Nanowires |
| title_fullStr | Criterion for Selective Area Growth of III-V Nanowires |
| title_full_unstemmed | Criterion for Selective Area Growth of III-V Nanowires |
| title_short | Criterion for Selective Area Growth of III-V Nanowires |
| title_sort | criterion for selective area growth of iii v nanowires |
| topic | selective area growth patterned substrates openings group III adatoms surface diffusion |
| url | https://www.mdpi.com/2079-4991/12/20/3698 |
| work_keys_str_mv | AT vladimirgdubrovskii criterionforselectiveareagrowthofiiivnanowires |