Non-Linear Optical Properties of Biexciton in Ellipsoidal Quantum Dot

We have presented a theoretical investigation of exciton and biexciton states for the ground and excited levels in a strongly oblate ellipsoidal quantum dot made from GaAs. The variational trial wave functions for the ground and excited states of the exciton and biexciton are constructed on the base...

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Main Authors: Yuri Y. Bleyan, Paytsar A. Mantashyan, Eduard M. Kazaryan, Hayk A. Sarkisyan, Gianluca Accorsi, Sotirios Baskoutas, David B. Hayrapetyan
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/12/9/1412
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author Yuri Y. Bleyan
Paytsar A. Mantashyan
Eduard M. Kazaryan
Hayk A. Sarkisyan
Gianluca Accorsi
Sotirios Baskoutas
David B. Hayrapetyan
author_facet Yuri Y. Bleyan
Paytsar A. Mantashyan
Eduard M. Kazaryan
Hayk A. Sarkisyan
Gianluca Accorsi
Sotirios Baskoutas
David B. Hayrapetyan
author_sort Yuri Y. Bleyan
collection DOAJ
description We have presented a theoretical investigation of exciton and biexciton states for the ground and excited levels in a strongly oblate ellipsoidal quantum dot made from GaAs. The variational trial wave functions for the ground and excited states of the exciton and biexciton are constructed on the base of one-particle wave functions. The energies for the ground and excited levels, depending on the ellipsoidal quantum dot’s geometrical parameters, are depicted in the framework of the variational method. The oscillator strength of the transition from exciton to biexciton states for ground and excited levels is investigated as a function of the ellipsoidal quantum dot’s small and large semiaxes. The third-order optical susceptibilities of ground and excited biexcitons around one-photon and two-photon resonances are calculated as a function of the photon energy. The dependences of third-order optical susceptibilities for the ground and excited levels on the photon energy for different values of the ellipsoidal quantum dot’s semiaxis are revealed. The absorption coefficients in the ellipsoidal quantum dot, both for ground and excited states of exciton and biexciton, are calculated. The absorption coefficients for the ground level of exciton and biexciton for the fixed value of the large semiaxis and for the different values of the small semiaxis are determined. Finally, the two-photon absorption coefficient of the biexciton in the GaAs ellipsoidal quantum dot is computed.
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spelling doaj.art-11f30ed1b81f4f5aa6fc95b4c595db542023-11-23T08:53:48ZengMDPI AGNanomaterials2079-49912022-04-01129141210.3390/nano12091412Non-Linear Optical Properties of Biexciton in Ellipsoidal Quantum DotYuri Y. Bleyan0Paytsar A. Mantashyan1Eduard M. Kazaryan2Hayk A. Sarkisyan3Gianluca Accorsi4Sotirios Baskoutas5David B. Hayrapetyan6Department of General Physics and Quantum Nanostructures, Russian-Armenian University, Yerevan 0051, ArmeniaDepartment of General Physics and Quantum Nanostructures, Russian-Armenian University, Yerevan 0051, ArmeniaDepartment of General Physics and Quantum Nanostructures, Russian-Armenian University, Yerevan 0051, ArmeniaDepartment of General Physics and Quantum Nanostructures, Russian-Armenian University, Yerevan 0051, ArmeniaCNR NANOTEC, Institute of Nanotechnology, University Campus Ecotekne, 73100 Lecce, ItalyDepartment of Materials Science, University of Patras, 265 04 Patras, GreeceDepartment of General Physics and Quantum Nanostructures, Russian-Armenian University, Yerevan 0051, ArmeniaWe have presented a theoretical investigation of exciton and biexciton states for the ground and excited levels in a strongly oblate ellipsoidal quantum dot made from GaAs. The variational trial wave functions for the ground and excited states of the exciton and biexciton are constructed on the base of one-particle wave functions. The energies for the ground and excited levels, depending on the ellipsoidal quantum dot’s geometrical parameters, are depicted in the framework of the variational method. The oscillator strength of the transition from exciton to biexciton states for ground and excited levels is investigated as a function of the ellipsoidal quantum dot’s small and large semiaxes. The third-order optical susceptibilities of ground and excited biexcitons around one-photon and two-photon resonances are calculated as a function of the photon energy. The dependences of third-order optical susceptibilities for the ground and excited levels on the photon energy for different values of the ellipsoidal quantum dot’s semiaxis are revealed. The absorption coefficients in the ellipsoidal quantum dot, both for ground and excited states of exciton and biexciton, are calculated. The absorption coefficients for the ground level of exciton and biexciton for the fixed value of the large semiaxis and for the different values of the small semiaxis are determined. Finally, the two-photon absorption coefficient of the biexciton in the GaAs ellipsoidal quantum dot is computed.https://www.mdpi.com/2079-4991/12/9/1412oblate ellipsoidal quantum dotexcitonbiexcitonthird-order susceptibilitytwo-photon absorption
spellingShingle Yuri Y. Bleyan
Paytsar A. Mantashyan
Eduard M. Kazaryan
Hayk A. Sarkisyan
Gianluca Accorsi
Sotirios Baskoutas
David B. Hayrapetyan
Non-Linear Optical Properties of Biexciton in Ellipsoidal Quantum Dot
Nanomaterials
oblate ellipsoidal quantum dot
exciton
biexciton
third-order susceptibility
two-photon absorption
title Non-Linear Optical Properties of Biexciton in Ellipsoidal Quantum Dot
title_full Non-Linear Optical Properties of Biexciton in Ellipsoidal Quantum Dot
title_fullStr Non-Linear Optical Properties of Biexciton in Ellipsoidal Quantum Dot
title_full_unstemmed Non-Linear Optical Properties of Biexciton in Ellipsoidal Quantum Dot
title_short Non-Linear Optical Properties of Biexciton in Ellipsoidal Quantum Dot
title_sort non linear optical properties of biexciton in ellipsoidal quantum dot
topic oblate ellipsoidal quantum dot
exciton
biexciton
third-order susceptibility
two-photon absorption
url https://www.mdpi.com/2079-4991/12/9/1412
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