Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures
The band alignment affects the electronic properties and possible applications of van der Waals heterostructures (vdWHs). Here, we theoretically build two-dimensional (2D) Janus SnSSe/phosphorene vdWHs and explore the influences of external factors on the electronic properties of the vdWHs. The resu...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-06-01
|
| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723003315 |
| _version_ | 1827936143310585856 |
|---|---|
| author | Ying Wang Mengjie He Chenhai Shen Jianye Wang Congxin Xia |
| author_facet | Ying Wang Mengjie He Chenhai Shen Jianye Wang Congxin Xia |
| author_sort | Ying Wang |
| collection | DOAJ |
| description | The band alignment affects the electronic properties and possible applications of van der Waals heterostructures (vdWHs). Here, we theoretically build two-dimensional (2D) Janus SnSSe/phosphorene vdWHs and explore the influences of external factors on the electronic properties of the vdWHs. The results identify that different interface patterns can lead to type III and type II vdWHs. Within a certain range, the weakened interlayer coupling or in-plane tensile strain can induce Se-interface vdWHs to change from intrinsic type II to type III, while S-interface vdWHs are robust. In addition, the positive electric field can adjust the vdWHs to exhibit type II, type III or type I characteristics, while the reverse electric field can only expand the tunneling window of type III vdWHs. This work suggests that interface-modified Janus SnSSe/phosphorene vdWHs possess potential applications in optoelectronic and tunneling FETs. |
| first_indexed | 2024-03-13T08:05:56Z |
| format | Article |
| id | doaj.art-11ffb9962fc74a95a7423e0274d98ab3 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-13T08:05:56Z |
| publishDate | 2023-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-11ffb9962fc74a95a7423e0274d98ab32023-06-01T04:35:55ZengElsevierResults in Physics2211-37972023-06-0149106538Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructuresYing Wang0Mengjie He1Chenhai Shen2Jianye Wang3Congxin Xia4School of Physics, Henan Normal University, Xinxiang 453007, ChinaSchool of Physics, Henan Normal University, Xinxiang 453007, ChinaSchool of Physics, Henan Normal University, Xinxiang 453007, ChinaInstitute of Applied Physics, Henan Academy of Sciences, Zhengzhou 450008, ChinaSchool of Physics, Henan Normal University, Xinxiang 453007, China; Corresponding author.The band alignment affects the electronic properties and possible applications of van der Waals heterostructures (vdWHs). Here, we theoretically build two-dimensional (2D) Janus SnSSe/phosphorene vdWHs and explore the influences of external factors on the electronic properties of the vdWHs. The results identify that different interface patterns can lead to type III and type II vdWHs. Within a certain range, the weakened interlayer coupling or in-plane tensile strain can induce Se-interface vdWHs to change from intrinsic type II to type III, while S-interface vdWHs are robust. In addition, the positive electric field can adjust the vdWHs to exhibit type II, type III or type I characteristics, while the reverse electric field can only expand the tunneling window of type III vdWHs. This work suggests that interface-modified Janus SnSSe/phosphorene vdWHs possess potential applications in optoelectronic and tunneling FETs.http://www.sciencedirect.com/science/article/pii/S2211379723003315vdWHsInterface effectBand alignment |
| spellingShingle | Ying Wang Mengjie He Chenhai Shen Jianye Wang Congxin Xia Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures Results in Physics vdWHs Interface effect Band alignment |
| title | Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures |
| title_full | Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures |
| title_fullStr | Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures |
| title_full_unstemmed | Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures |
| title_short | Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures |
| title_sort | tunable band alignment engineering in two dimensional janus snsse phosphorene van der waals heterostructures |
| topic | vdWHs Interface effect Band alignment |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723003315 |
| work_keys_str_mv | AT yingwang tunablebandalignmentengineeringintwodimensionaljanussnssephosphorenevanderwaalsheterostructures AT mengjiehe tunablebandalignmentengineeringintwodimensionaljanussnssephosphorenevanderwaalsheterostructures AT chenhaishen tunablebandalignmentengineeringintwodimensionaljanussnssephosphorenevanderwaalsheterostructures AT jianyewang tunablebandalignmentengineeringintwodimensionaljanussnssephosphorenevanderwaalsheterostructures AT congxinxia tunablebandalignmentengineeringintwodimensionaljanussnssephosphorenevanderwaalsheterostructures |