Nitrogen-Related Defects in Crystalline Silicon
Defects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are almost always present in a silicon (Si) lattice, either unintentionally, due to the growth and processing procedures, or intentionally, as a re...
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MDPI AG
2024-02-01
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| author | E. N. Sgourou N. Sarlis A. Chroneos C. A. Londos |
| author_facet | E. N. Sgourou N. Sarlis A. Chroneos C. A. Londos |
| author_sort | E. N. Sgourou |
| collection | DOAJ |
| description | Defects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are almost always present in a silicon (Si) lattice, either unintentionally, due to the growth and processing procedures, or intentionally, as a result of implantation. Nitrogen forms complexes with intrinsic defects (i.e., vacancies and self-interstitials) as well as with other impurities present in the Si lattice such as oxygen and carbon. It is, therefore, necessary to investigate and understand nitrogen-related defects, especially their structures, their energies, and their interaction with intrinsic point defects and impurities. The present review is focused on nitrogen-related defects (for example N<sub>i</sub>, N<sub>s</sub>, N<sub>i</sub>N<sub>i</sub>, N<sub>i</sub>N<sub>s</sub>, N<sub>s</sub>N<sub>s</sub>); nitrogen–self-interstitial and nitrogen-vacancy-related complexes (for example N<sub>s</sub>V, (N<sub>i</sub>N<sub>i</sub>)Si<sub>i</sub>, (N<sub>s</sub>N<sub>s</sub>)V); nitrogen–oxygen defects (for example NO, NO<sub>2</sub>, N<sub>2</sub>O, N<sub>2</sub>O<sub>2</sub>); more extended clusters such as V<sub>m</sub>N<sub>2</sub>O<sub>n</sub> (m, n = 1, 2); and nitrogen–carbon defects (for example C<sub>i</sub>N and C<sub>i</sub>NO). Both experimental and theoretical investigations are considered as they provide complementary information. |
| first_indexed | 2024-03-07T22:43:15Z |
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| last_indexed | 2024-03-07T22:43:15Z |
| publishDate | 2024-02-01 |
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| spelling | doaj.art-121205dbffb94c059bd0112b5ca688a02024-02-23T15:06:36ZengMDPI AGApplied Sciences2076-34172024-02-01144163110.3390/app14041631Nitrogen-Related Defects in Crystalline SiliconE. N. Sgourou0N. Sarlis1A. Chroneos2C. A. Londos3Section of Condensed Matter Physics, Department of Physics, National and Kapodistrian University of Athens, Panepistimiopolis Zografos, 15784 Athens, GreeceSection of Condensed Matter Physics, Department of Physics, National and Kapodistrian University of Athens, Panepistimiopolis Zografos, 15784 Athens, GreeceDepartment of Electrical and Computer Engineering, University of Thessaly, 38333 Volos, GreeceSection of Condensed Matter Physics, Department of Physics, National and Kapodistrian University of Athens, Panepistimiopolis Zografos, 15784 Athens, GreeceDefects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are almost always present in a silicon (Si) lattice, either unintentionally, due to the growth and processing procedures, or intentionally, as a result of implantation. Nitrogen forms complexes with intrinsic defects (i.e., vacancies and self-interstitials) as well as with other impurities present in the Si lattice such as oxygen and carbon. It is, therefore, necessary to investigate and understand nitrogen-related defects, especially their structures, their energies, and their interaction with intrinsic point defects and impurities. The present review is focused on nitrogen-related defects (for example N<sub>i</sub>, N<sub>s</sub>, N<sub>i</sub>N<sub>i</sub>, N<sub>i</sub>N<sub>s</sub>, N<sub>s</sub>N<sub>s</sub>); nitrogen–self-interstitial and nitrogen-vacancy-related complexes (for example N<sub>s</sub>V, (N<sub>i</sub>N<sub>i</sub>)Si<sub>i</sub>, (N<sub>s</sub>N<sub>s</sub>)V); nitrogen–oxygen defects (for example NO, NO<sub>2</sub>, N<sub>2</sub>O, N<sub>2</sub>O<sub>2</sub>); more extended clusters such as V<sub>m</sub>N<sub>2</sub>O<sub>n</sub> (m, n = 1, 2); and nitrogen–carbon defects (for example C<sub>i</sub>N and C<sub>i</sub>NO). Both experimental and theoretical investigations are considered as they provide complementary information.https://www.mdpi.com/2076-3417/14/4/1631siliconnitrogenintrinsic defects |
| spellingShingle | E. N. Sgourou N. Sarlis A. Chroneos C. A. Londos Nitrogen-Related Defects in Crystalline Silicon Applied Sciences silicon nitrogen intrinsic defects |
| title | Nitrogen-Related Defects in Crystalline Silicon |
| title_full | Nitrogen-Related Defects in Crystalline Silicon |
| title_fullStr | Nitrogen-Related Defects in Crystalline Silicon |
| title_full_unstemmed | Nitrogen-Related Defects in Crystalline Silicon |
| title_short | Nitrogen-Related Defects in Crystalline Silicon |
| title_sort | nitrogen related defects in crystalline silicon |
| topic | silicon nitrogen intrinsic defects |
| url | https://www.mdpi.com/2076-3417/14/4/1631 |
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