Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs
Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge breakdown by special measures. Most modern silicon...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-06-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/23/12/5369 |