1/f noise and carrier transport mechanisms in InSb p + -n junctions
The dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2018-12-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n4_2018/P374-379abstr.html |
| _version_ | 1818662668565741568 |
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| author | V.V. Tetyorkin A.V. Sukach A.I. Tkachuk S.P. Trotsenko |
| author_facet | V.V. Tetyorkin A.V. Sukach A.I. Tkachuk S.P. Trotsenko |
| author_sort | V.V. Tetyorkin |
| collection | DOAJ |
| description | The dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise. |
| first_indexed | 2024-12-17T05:04:37Z |
| format | Article |
| id | doaj.art-1282740d51ca4f3bb7461ebd8eae4192 |
| institution | Directory Open Access Journal |
| issn | 1560-8034 1605-6582 |
| language | English |
| last_indexed | 2024-12-17T05:04:37Z |
| publishDate | 2018-12-01 |
| publisher | National Academy of Sciences of Ukraine. Institute of Semi conductor physics. |
| record_format | Article |
| series | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| spelling | doaj.art-1282740d51ca4f3bb7461ebd8eae41922022-12-21T22:02:28ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics.Semiconductor Physics, Quantum Electronics & Optoelectronics1560-80341605-65822018-12-0121437437910.15407/spqeo21.04.3741/f noise and carrier transport mechanisms in InSb p + -n junctionsV.V. Tetyorkin0A.V. Sukach1A.I. Tkachuk2S.P. Trotsenko3V. Lashkaryov Institute of Semiconductor Physics, NAS of UkraineV. Lashkaryov Institute of Semiconductor Physics, NAS of UkraineV. Vynnychenko Central Ukrainian State Pedagogical University, 25006 Kropyvnytskyi, UkraineV. Lashkaryov Institute of Semiconductor Physics, NAS of UkraineThe dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise.http://journal-spqeo.org.ua/n4_2018/P374-379abstr.htmlInSbinfrared spectrump-n junctiontrap-assisted tunneling1/f noise |
| spellingShingle | V.V. Tetyorkin A.V. Sukach A.I. Tkachuk S.P. Trotsenko 1/f noise and carrier transport mechanisms in InSb p + -n junctions Semiconductor Physics, Quantum Electronics & Optoelectronics InSb infrared spectrum p-n junction trap-assisted tunneling 1/f noise |
| title | 1/f noise and carrier transport mechanisms in InSb p + -n junctions |
| title_full | 1/f noise and carrier transport mechanisms in InSb p + -n junctions |
| title_fullStr | 1/f noise and carrier transport mechanisms in InSb p + -n junctions |
| title_full_unstemmed | 1/f noise and carrier transport mechanisms in InSb p + -n junctions |
| title_short | 1/f noise and carrier transport mechanisms in InSb p + -n junctions |
| title_sort | 1 f noise and carrier transport mechanisms in insb p n junctions |
| topic | InSb infrared spectrum p-n junction trap-assisted tunneling 1/f noise |
| url | http://journal-spqeo.org.ua/n4_2018/P374-379abstr.html |
| work_keys_str_mv | AT vvtetyorkin 1fnoiseandcarriertransportmechanismsininsbpnjunctions AT avsukach 1fnoiseandcarriertransportmechanismsininsbpnjunctions AT aitkachuk 1fnoiseandcarriertransportmechanismsininsbpnjunctions AT sptrotsenko 1fnoiseandcarriertransportmechanismsininsbpnjunctions |