1/f noise and carrier transport mechanisms in InSb p + -n junctions

1/f noise and carrier transport mechanisms in InSb p + -n junctions

The dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are...

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Bibliographic Details
Main Authors: V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2018-12-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
InSb
infrared spectrum
p-n junction
trap-assisted tunneling
1/f noise
Online Access:http://journal-spqeo.org.ua/n4_2018/P374-379abstr.html

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