Multi‐Layered Triboelectric Nanogenerators with Controllable Multiple Spikes for Low‐Power Artificial Synaptic Devices
Abstract In the domains of wearable electronics, robotics, and the Internet of Things, there is a demand for devices with low power consumption and the capability of multiplex sensing, memory, and learning. Triboelectric nanogenerators (TENGs) offer remarkable versatility in this regard, particularl...
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| Format: | Article |
| Language: | English |
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Wiley
2023-12-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202304598 |
| _version_ | 1797373723479638016 |
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| author | Yong‐Jin Park Yun Goo Ro Young‐Eun Shin Cheolhong Park Sangyun Na Yoojin Chang Hyunhyub Ko |
| author_facet | Yong‐Jin Park Yun Goo Ro Young‐Eun Shin Cheolhong Park Sangyun Na Yoojin Chang Hyunhyub Ko |
| author_sort | Yong‐Jin Park |
| collection | DOAJ |
| description | Abstract In the domains of wearable electronics, robotics, and the Internet of Things, there is a demand for devices with low power consumption and the capability of multiplex sensing, memory, and learning. Triboelectric nanogenerators (TENGs) offer remarkable versatility in this regard, particularly when integrated with synaptic transistors that mimic biological synapses. However, conventional TENGs, generating only two spikes per cycle, have limitations when used in synaptic devices requiring repetitive high‐frequency gating signals to perform various synaptic plasticity functions. Herein, a multi‐layered micropatterned TENG (M‐TENG) consisting of a polydimethylsiloxane (PDMS) film and a composite film that includes 1H,1H,2H,2H‐perfluorooctyltrichlorosilane/BaTiO3/PDMS are proposed. The M‐TENG generates multiple spikes from a single touch by utilizing separate triboelectric charges at the multiple friction layers, along with a contact/separation delay achieved by distinct spacers between layers. This configuration allows the maximum triboelectric output charge of M‐TENG to reach up to 7.52 nC, compared to 3.69 nC for a single‐layered TENG. Furthermore, by integrating M‐TENGs with an organic electrochemical transistor, the spike number multiplication property of M‐TENGs is leveraged to demonstrate an artificial synaptic device with low energy consumption. As a proof‐of‐concept application, a robotic hand is operated through continuous memory training under repeated stimulations, successfully emulating long‐term plasticity. |
| first_indexed | 2024-03-08T18:54:33Z |
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| id | doaj.art-1289804645ae4eb8bf15d30fa1850cfb |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-08T18:54:33Z |
| publishDate | 2023-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-1289804645ae4eb8bf15d30fa1850cfb2023-12-28T14:55:39ZengWileyAdvanced Science2198-38442023-12-011036n/an/a10.1002/advs.202304598Multi‐Layered Triboelectric Nanogenerators with Controllable Multiple Spikes for Low‐Power Artificial Synaptic DevicesYong‐Jin Park0Yun Goo Ro1Young‐Eun Shin2Cheolhong Park3Sangyun Na4Yoojin Chang5Hyunhyub Ko6School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) 50, UNIST‐gil Ulsan 44919 Republic of KoreaSchool of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) 50, UNIST‐gil Ulsan 44919 Republic of KoreaSchool of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) 50, UNIST‐gil Ulsan 44919 Republic of KoreaSchool of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) 50, UNIST‐gil Ulsan 44919 Republic of KoreaSchool of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) 50, UNIST‐gil Ulsan 44919 Republic of KoreaSchool of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) 50, UNIST‐gil Ulsan 44919 Republic of KoreaSchool of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) 50, UNIST‐gil Ulsan 44919 Republic of KoreaAbstract In the domains of wearable electronics, robotics, and the Internet of Things, there is a demand for devices with low power consumption and the capability of multiplex sensing, memory, and learning. Triboelectric nanogenerators (TENGs) offer remarkable versatility in this regard, particularly when integrated with synaptic transistors that mimic biological synapses. However, conventional TENGs, generating only two spikes per cycle, have limitations when used in synaptic devices requiring repetitive high‐frequency gating signals to perform various synaptic plasticity functions. Herein, a multi‐layered micropatterned TENG (M‐TENG) consisting of a polydimethylsiloxane (PDMS) film and a composite film that includes 1H,1H,2H,2H‐perfluorooctyltrichlorosilane/BaTiO3/PDMS are proposed. The M‐TENG generates multiple spikes from a single touch by utilizing separate triboelectric charges at the multiple friction layers, along with a contact/separation delay achieved by distinct spacers between layers. This configuration allows the maximum triboelectric output charge of M‐TENG to reach up to 7.52 nC, compared to 3.69 nC for a single‐layered TENG. Furthermore, by integrating M‐TENGs with an organic electrochemical transistor, the spike number multiplication property of M‐TENGs is leveraged to demonstrate an artificial synaptic device with low energy consumption. As a proof‐of‐concept application, a robotic hand is operated through continuous memory training under repeated stimulations, successfully emulating long‐term plasticity.https://doi.org/10.1002/advs.202304598artificial synaptic deviceshuman‐machine interfacetransistorstriboelectric nanogenerators |
| spellingShingle | Yong‐Jin Park Yun Goo Ro Young‐Eun Shin Cheolhong Park Sangyun Na Yoojin Chang Hyunhyub Ko Multi‐Layered Triboelectric Nanogenerators with Controllable Multiple Spikes for Low‐Power Artificial Synaptic Devices Advanced Science artificial synaptic devices human‐machine interface transistors triboelectric nanogenerators |
| title | Multi‐Layered Triboelectric Nanogenerators with Controllable Multiple Spikes for Low‐Power Artificial Synaptic Devices |
| title_full | Multi‐Layered Triboelectric Nanogenerators with Controllable Multiple Spikes for Low‐Power Artificial Synaptic Devices |
| title_fullStr | Multi‐Layered Triboelectric Nanogenerators with Controllable Multiple Spikes for Low‐Power Artificial Synaptic Devices |
| title_full_unstemmed | Multi‐Layered Triboelectric Nanogenerators with Controllable Multiple Spikes for Low‐Power Artificial Synaptic Devices |
| title_short | Multi‐Layered Triboelectric Nanogenerators with Controllable Multiple Spikes for Low‐Power Artificial Synaptic Devices |
| title_sort | multi layered triboelectric nanogenerators with controllable multiple spikes for low power artificial synaptic devices |
| topic | artificial synaptic devices human‐machine interface transistors triboelectric nanogenerators |
| url | https://doi.org/10.1002/advs.202304598 |
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