Metal-insulator transition effect on Graphene/VO $$_\text {2}$$ 2 heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement
Abstract High-quality VO $$_2$$ 2 films were fabricated on top of c-Al $$_2$$ 2 O $$_3$$ 3 substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO $$_2$$ 2 heterostructure were conducted. Graphene layers were placed on top of $$\sim$$ ∼ 50 and $$\sim$$ ∼ 1...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-02-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-54844-w |
| _version_ | 1797274912024428544 |
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| author | Kittitat Lerttraikul Wirunchana Rattanasakuldilok Teerachote Pakornchote Thiti Bovornratanaraks Illias Klanurak Thiti Taychatanapat Ladda Srathongsian Chaowaphat Seriwatanachai Pongsakorn Kanjanaboos Sojiphong Chatraphorn Salinporn Kittiwatanakul |
| author_facet | Kittitat Lerttraikul Wirunchana Rattanasakuldilok Teerachote Pakornchote Thiti Bovornratanaraks Illias Klanurak Thiti Taychatanapat Ladda Srathongsian Chaowaphat Seriwatanachai Pongsakorn Kanjanaboos Sojiphong Chatraphorn Salinporn Kittiwatanakul |
| author_sort | Kittitat Lerttraikul |
| collection | DOAJ |
| description | Abstract High-quality VO $$_2$$ 2 films were fabricated on top of c-Al $$_2$$ 2 O $$_3$$ 3 substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO $$_2$$ 2 heterostructure were conducted. Graphene layers were placed on top of $$\sim$$ ∼ 50 and $$\sim$$ ∼ 100 nm VO $$_2$$ 2 . The graphene layers were introduced using mechanical exfoliate and CVD graphene wet-transfer method to prevent the worsening crystallinity of VO $$_2$$ 2 , to avoid the strain effect from lattice mismatch and to study how VO $$_2$$ 2 can affect the graphene layer. Slight increases in graphene/VO $$_2$$ 2 T $$_\text {MIT}$$ MIT compared to pure VO $$_2$$ 2 by $$\sim$$ ∼ 1.9 $$^{\circ }$$ ∘ C and $$\sim$$ ∼ 3.8 $$^{\circ }$$ ∘ C for CVD graphene on 100 and 50 nm VO $$_2$$ 2 , respectively, were observed in temperature-dependent resistivity measurements. As the strain effect from lattice mismatch was minimized in our samples, the increase in T $$_\text {MIT}$$ MIT may originate from a large difference in the thermal conductivity between graphene and VO $$_2$$ 2 . Temperature-dependent Raman spectroscopy measurements were also performed on all samples, and the G-peak splitting into two peaks, G $$^{+}$$ + and G $$^{-}$$ - , were observed on graphene/VO $$_2$$ 2 (100 nm) samples. The G-peak splitting is a reversible process and may originates from in-plane asymmetric tensile strain applied under the graphene layer due to the VO $$_2$$ 2 phase transition mechanism. The 2D-peak measurements also show large blue-shifts around 13 cm $$^{-1}$$ - 1 at room temperature and slightly red-shifts trend as temperature increases for 100 nm VO $$_2$$ 2 samples. Other electronic interactions between graphene and VO $$_2$$ 2 are expected as evidenced by 2D-peak characteristic observed in Raman measurements. These findings may provide a better understanding of graphene/VO $$_2$$ 2 and introduce some new applications that utilize the controllable structural properties of graphene via the VO $$_2$$ 2 phase transition. |
| first_indexed | 2024-03-07T15:05:53Z |
| format | Article |
| id | doaj.art-1296d2882b99462f9b2b81fcf45dd723 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-07T15:05:53Z |
| publishDate | 2024-02-01 |
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| series | Scientific Reports |
| spelling | doaj.art-1296d2882b99462f9b2b81fcf45dd7232024-03-05T18:53:38ZengNature PortfolioScientific Reports2045-23222024-02-011411910.1038/s41598-024-54844-wMetal-insulator transition effect on Graphene/VO $$_\text {2}$$ 2 heterostructure via temperature-dependent Raman spectroscopy and resistivity measurementKittitat Lerttraikul0Wirunchana Rattanasakuldilok1Teerachote Pakornchote2Thiti Bovornratanaraks3Illias Klanurak4Thiti Taychatanapat5Ladda Srathongsian6Chaowaphat Seriwatanachai7Pongsakorn Kanjanaboos8Sojiphong Chatraphorn9Salinporn Kittiwatanakul10Department of Physics, Faculty of Science, Chulalongkorn UniversityDepartment of Physics, Accelerator Laboratory, University of JyväskyläDepartment of Physics, Faculty of Science, Chulalongkorn UniversityDepartment of Physics, Faculty of Science, Chulalongkorn UniversityDepartment of Physics, Faculty of Science, Chulalongkorn UniversityDepartment of Physics, Faculty of Science, Chulalongkorn UniversitySchool of Materials Science and Innovation, Faculty of Science, Mahidol UniversitySchool of Materials Science and Innovation, Faculty of Science, Mahidol UniversitySchool of Materials Science and Innovation, Faculty of Science, Mahidol UniversityDepartment of Physics, Faculty of Science, Chulalongkorn UniversityDepartment of Physics, Faculty of Science, Chulalongkorn UniversityAbstract High-quality VO $$_2$$ 2 films were fabricated on top of c-Al $$_2$$ 2 O $$_3$$ 3 substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO $$_2$$ 2 heterostructure were conducted. Graphene layers were placed on top of $$\sim$$ ∼ 50 and $$\sim$$ ∼ 100 nm VO $$_2$$ 2 . The graphene layers were introduced using mechanical exfoliate and CVD graphene wet-transfer method to prevent the worsening crystallinity of VO $$_2$$ 2 , to avoid the strain effect from lattice mismatch and to study how VO $$_2$$ 2 can affect the graphene layer. Slight increases in graphene/VO $$_2$$ 2 T $$_\text {MIT}$$ MIT compared to pure VO $$_2$$ 2 by $$\sim$$ ∼ 1.9 $$^{\circ }$$ ∘ C and $$\sim$$ ∼ 3.8 $$^{\circ }$$ ∘ C for CVD graphene on 100 and 50 nm VO $$_2$$ 2 , respectively, were observed in temperature-dependent resistivity measurements. As the strain effect from lattice mismatch was minimized in our samples, the increase in T $$_\text {MIT}$$ MIT may originate from a large difference in the thermal conductivity between graphene and VO $$_2$$ 2 . Temperature-dependent Raman spectroscopy measurements were also performed on all samples, and the G-peak splitting into two peaks, G $$^{+}$$ + and G $$^{-}$$ - , were observed on graphene/VO $$_2$$ 2 (100 nm) samples. The G-peak splitting is a reversible process and may originates from in-plane asymmetric tensile strain applied under the graphene layer due to the VO $$_2$$ 2 phase transition mechanism. The 2D-peak measurements also show large blue-shifts around 13 cm $$^{-1}$$ - 1 at room temperature and slightly red-shifts trend as temperature increases for 100 nm VO $$_2$$ 2 samples. Other electronic interactions between graphene and VO $$_2$$ 2 are expected as evidenced by 2D-peak characteristic observed in Raman measurements. These findings may provide a better understanding of graphene/VO $$_2$$ 2 and introduce some new applications that utilize the controllable structural properties of graphene via the VO $$_2$$ 2 phase transition.https://doi.org/10.1038/s41598-024-54844-w |
| spellingShingle | Kittitat Lerttraikul Wirunchana Rattanasakuldilok Teerachote Pakornchote Thiti Bovornratanaraks Illias Klanurak Thiti Taychatanapat Ladda Srathongsian Chaowaphat Seriwatanachai Pongsakorn Kanjanaboos Sojiphong Chatraphorn Salinporn Kittiwatanakul Metal-insulator transition effect on Graphene/VO $$_\text {2}$$ 2 heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement Scientific Reports |
| title | Metal-insulator transition effect on Graphene/VO $$_\text {2}$$ 2 heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement |
| title_full | Metal-insulator transition effect on Graphene/VO $$_\text {2}$$ 2 heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement |
| title_fullStr | Metal-insulator transition effect on Graphene/VO $$_\text {2}$$ 2 heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement |
| title_full_unstemmed | Metal-insulator transition effect on Graphene/VO $$_\text {2}$$ 2 heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement |
| title_short | Metal-insulator transition effect on Graphene/VO $$_\text {2}$$ 2 heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement |
| title_sort | metal insulator transition effect on graphene vo text 2 2 heterostructure via temperature dependent raman spectroscopy and resistivity measurement |
| url | https://doi.org/10.1038/s41598-024-54844-w |
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