Metal-insulator transition effect on Graphene/VO $$_\text {2}$$ 2 heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement
Abstract High-quality VO $$_2$$ 2 films were fabricated on top of c-Al $$_2$$ 2 O $$_3$$ 3 substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO $$_2$$ 2 heterostructure were conducted. Graphene layers were placed on top of $$\sim$$ ∼ 50 and $$\sim$$ ∼ 1...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-02-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-54844-w |