Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive Applications
Fast switching characteristic of wide bandgap devices enables high switching frequency of power devices and thereby, can facilitate high fundamental frequency operation of electrical machines. However, with the switching transition times in orders of tens of nanoseconds, the high dv/dt is observed a...
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| Format: | Article |
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IEEE
2021-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9328773/ |
| _version_ | 1818448751259287552 |
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| author | Heonyoung Kim Anup Anurag Sayan Acharya Subhashish Bhattacharya |
| author_facet | Heonyoung Kim Anup Anurag Sayan Acharya Subhashish Bhattacharya |
| author_sort | Heonyoung Kim |
| collection | DOAJ |
| description | Fast switching characteristic of wide bandgap devices enables high switching frequency of power devices and thereby, can facilitate high fundamental frequency operation of electrical machines. However, with the switching transition times in orders of tens of nanoseconds, the high dv/dt is observed across the switching device. The high dv/dt experienced by the switches, and consequently by the machine, can degrade winding insulations or bearings over a period of time. Therefore, it is imperative to maintain the dv/dt below recommended values depending on the machine insulation. The dv/dt across the devices can be adjusted by varying the gate resistance. A high value of gate resistance, however, introduces additional switching losses on the device. Using different dv/dt filtering techniques can also help to control the dv/dt on the machine terminals. These techniques do not increase the switching losses on the device. However, it introduces additional losses in the filter resistors and also increases the cost of the system. In this paper, an analysis based on the impact of gate resistance on the dv/dt across the machine, and the corresponding losses is carried out. An analytical dv/dt filter design strategy is proposed to limit the dv/dt to a particular value. With the proposed design scheme, the value of each filter component can be easily obtained, and filter losses can be estimated accurately. Lastly, a comparison is performed on the basis of efficiency between these two techniques. |
| first_indexed | 2024-12-14T20:24:29Z |
| format | Article |
| id | doaj.art-12a583924f93452a97b8a472e9a67ec5 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-14T20:24:29Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-12a583924f93452a97b8a472e9a67ec52022-12-21T22:48:39ZengIEEEIEEE Access2169-35362021-01-019152281523810.1109/ACCESS.2021.30531989328773Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive ApplicationsHeonyoung Kim0https://orcid.org/0000-0003-1203-2600Anup Anurag1https://orcid.org/0000-0001-7407-7260Sayan Acharya2https://orcid.org/0000-0002-6984-3191Subhashish Bhattacharya3https://orcid.org/0000-0001-9311-5744Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USADepartment of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USAABB US Corporate Research Center, Raleigh, NC, USADepartment of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USAFast switching characteristic of wide bandgap devices enables high switching frequency of power devices and thereby, can facilitate high fundamental frequency operation of electrical machines. However, with the switching transition times in orders of tens of nanoseconds, the high dv/dt is observed across the switching device. The high dv/dt experienced by the switches, and consequently by the machine, can degrade winding insulations or bearings over a period of time. Therefore, it is imperative to maintain the dv/dt below recommended values depending on the machine insulation. The dv/dt across the devices can be adjusted by varying the gate resistance. A high value of gate resistance, however, introduces additional switching losses on the device. Using different dv/dt filtering techniques can also help to control the dv/dt on the machine terminals. These techniques do not increase the switching losses on the device. However, it introduces additional losses in the filter resistors and also increases the cost of the system. In this paper, an analysis based on the impact of gate resistance on the dv/dt across the machine, and the corresponding losses is carried out. An analytical dv/dt filter design strategy is proposed to limit the dv/dt to a particular value. With the proposed design scheme, the value of each filter component can be easily obtained, and filter losses can be estimated accurately. Lastly, a comparison is performed on the basis of efficiency between these two techniques.https://ieeexplore.ieee.org/document/9328773/3-phase inverterdv/dt filtergate resistancegate driverhigh speed machine drivessilicon carbide (SiC) |
| spellingShingle | Heonyoung Kim Anup Anurag Sayan Acharya Subhashish Bhattacharya Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive Applications IEEE Access 3-phase inverter dv/dt filter gate resistance gate driver high speed machine drives silicon carbide (SiC) |
| title | Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive Applications |
| title_full | Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive Applications |
| title_fullStr | Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive Applications |
| title_full_unstemmed | Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive Applications |
| title_short | Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive Applications |
| title_sort | analytical study of sic mosfet based inverter output dv dt mitigation and loss comparison with a passive dv dt filter for high frequency motor drive applications |
| topic | 3-phase inverter dv/dt filter gate resistance gate driver high speed machine drives silicon carbide (SiC) |
| url | https://ieeexplore.ieee.org/document/9328773/ |
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