Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive Applications
Fast switching characteristic of wide bandgap devices enables high switching frequency of power devices and thereby, can facilitate high fundamental frequency operation of electrical machines. However, with the switching transition times in orders of tens of nanoseconds, the high dv/dt is observed a...
Main Authors: | Heonyoung Kim, Anup Anurag, Sayan Acharya, Subhashish Bhattacharya |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
|
Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9328773/ |
Similar Items
-
Comprehensive Analysis and Improvement Methods of Noise Immunity of Desat Protection for High Voltage SiC MOSFETs With High DV/DT
by: Xingxuan Huang, et al.
Published: (2022-01-01) -
A New Design Technique for a High-Speed and High dV/dt Immunity Floating-Voltage Level Shifter
by: Min Guo, et al.
Published: (2023-11-01) -
Comparative Evaluation of Gate Driver and LC-Filter Based dv/dt-Limitation for SiC-Based Motor-Integrated Variable Speed Drive Inverters
by: Michael Haider, et al.
Published: (2023-01-01) -
An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET
by: Weichi Zhang, et al.
Published: (2020-01-01) -
A Simple Closed-Loop Active Gate Voltage Driver for Controlling di<sub>C</sub>/dt and dv<sub>CE</sub>/dt in IGBTs
by: Hamidreza Ghorbani, et al.
Published: (2019-01-01)